IPD65R950CFDBTMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Packaging :

Cut Tape (CT)

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Pulsed Drain Current-Max (IDM) :

11A

JESD-30 Code :

R-PSSO-G2

Power Dissipation-Max :

36.7W Tc

Vgs (Max) :

±20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Avalanche Energy Rating (Eas) :

50 mJ

Terminal Position :

Single

Configuration :

SINGLE WITH BUILT-IN DIODE

Operating Temperature :

-55°C~150°C TJ

Additional Feature :

High Reliability

Mounting Type :

Surface Mount

Pbfree Code :

No

RoHS Status :

ROHS3 Compliant

Vgs(th) (Max) @ Id :

4.5V @ 200μA

Current - Continuous Drain (Id) @ 25°C :

3.9A Tc

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Drain Current-Max (Abs) (ID) :

3.9A

Number of Terminations :

2

Surface Mount :

yes

Published :

2012

Drain-source On Resistance-Max :

0.95Ohm

Series :

CoolMOS™

Operating Mode :

ENHANCEMENT MODE

Factory Lead Time :

26 Weeks

JEDEC-95 Code :

TO-252AA

Drain to Source Voltage (Vdss) :

650V

Pin Count :

3

Gate Charge (Qg) (Max) @ Vgs :

14.1nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

380pF @ 100V

Transistor Application :

SWITCHING

Rds On (Max) @ Id, Vgs :

950m Ω @ 1.5A, 10V

Terminal Form :

Gull wing

DS Breakdown Voltage-Min :

650V

Drive Voltage (Max Rds On,Min Rds On) :

10V

FET Type :

N-Channel

Number of Elements :

1

Case Connection :

DRAIN

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED