IPD60N10S412ATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Fall Time (Typ) :

13 ns

Gate to Source Voltage (Vgs) :

20V

Continuous Drain Current (ID) :

60A

Mount :

Surface Mount

Drain-source On Resistance-Max :

0.0122Ohm

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Number of Elements :

1

Pbfree Code :

yes

JESD-30 Code :

R-PSSO-G2

Configuration :

SINGLE WITH BUILT-IN DIODE

Current - Continuous Drain (Id) @ 25°C :

60A Tc

Turn-Off Delay Time :

9 ns

Input Capacitance (Ciss) (Max) @ Vds :

2470pF @ 25V

Vgs(th) (Max) @ Id :

3.5V @ 46µA

Operating Mode :

ENHANCEMENT MODE

Vgs (Max) :

±20V

Avalanche Energy Rating (Eas) :

120 mJ

Power Dissipation-Max :

94W Tc

Terminal Form :

Gull wing

Lead Free :

Contains Lead

JESD-609 Code :

e3

Pulsed Drain Current-Max (IDM) :

240A

Max Dual Supply Voltage :

100V

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

RoHS Status :

ROHS3 Compliant

Rise Time :

3ns

Published :

2013

Transistor Element Material :

SILICON

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Terminal Position :

Single

FET Type :

N-Channel

Terminal Finish :

Tin (Sn)

Packaging :

Tape and Reel (TR)

Halogen Free :

Halogen Free

ECCN Code :

EAR99

Rds On (Max) @ Id, Vgs :

12.2m Ω @ 60A, 10V

Operating Temperature :

-55°C~175°C TJ

Number of Terminations :

2

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Case Connection :

DRAIN

Drive Voltage (Max Rds On,Min Rds On) :

10V

Reach Compliance Code :

not_compliant

Series :

Automotive, AEC-Q101, OptiMOS™

Gate Charge (Qg) (Max) @ Vgs :

34nC @ 10V

Number of Pins :

3

Turn On Delay Time :

6 ns

Mounting Type :

Surface Mount

Factory Lead Time :

14 Weeks