IPD60N10S412ATMA1
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- Mfr.Part #
- IPD60N10S412ATMA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 60A TO252-3
- Stock
- 5,842
- In Stock ：
- 5,842
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Max Dual Supply Voltage :
- 100V
- Mount :
- Surface Mount
- Terminal Form :
- Gull wing
- Terminal Finish :
- Tin (Sn)
- Gate Charge (Qg) (Max) @ Vgs :
- 34nC @ 10V
- Fall Time (Typ) :
- 13 ns
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- ECCN Code :
- EAR99
- Current - Continuous Drain (Id) @ 25°C :
- 60A Tc
- Published :
- 2013
- Mounting Type :
- Surface Mount
- Rds On (Max) @ Id, Vgs :
- 12.2m Ω @ 60A, 10V
- Vgs (Max) :
- ±20V
- Continuous Drain Current (ID) :
- 60A
- Packaging :
- Tape and Reel (TR)
- RoHS Status :
- ROHS3 Compliant
- Series :
- Automotive, AEC-Q101, OptiMOS™
- Power Dissipation-Max :
- 94W Tc
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Number of Elements :
- 1
- Terminal Position :
- Single
- Drain-source On Resistance-Max :
- 0.0122Ohm
- Halogen Free :
- Halogen Free
- Number of Terminations :
- 2
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- JESD-609 Code :
- e3
- Pbfree Code :
- yes
- Operating Mode :
- ENHANCEMENT MODE
- Pulsed Drain Current-Max (IDM) :
- 240A
- Turn-Off Delay Time :
- 9 ns
- Lead Free :
- Contains Lead
- Rise Time :
- 3ns
- Number of Pins :
- 3
- Transistor Element Material :
- SILICON
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Factory Lead Time :
- 14 Weeks
- Input Capacitance (Ciss) (Max) @ Vds :
- 2470pF @ 25V
- Turn On Delay Time :
- 6 ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Gate to Source Voltage (Vgs) :
- 20V
- Vgs(th) (Max) @ Id :
- 3.5V @ 46µA
- Avalanche Energy Rating (Eas) :
- 120 mJ
- Operating Temperature :
- -55°C~175°C TJ
- JESD-30 Code :
- R-PSSO-G2
- Case Connection :
- DRAIN
- Reach Compliance Code :
- not_compliant
- FET Type :
- N-Channel
- Datasheets
- IPD60N10S412ATMA1
IPD60N10S412ATMA1 Documents
N-Channel Tape & Reel (TR) 12.2m Ω @ 60A, 10V ±20V 2470pF @ 25V 34nC @ 10V TO-252-3, DPak (2 Leads + Tab), SC-63
IPD60N10S412ATMA1 Overview
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 120 mJ.A device's maximal input capacitance is 2470pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 60A, which represents the maximum continuous current it can conduct.Its turn-off delay time is 9 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 240A, which is its maximum rated peak drain current.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 6 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.By using 100V, it can supply the maximum voltage from two sources.This device reduces its overall power consumption by using drive voltage (10V).
IPD60N10S412ATMA1 Features
the avalanche energy rating (Eas) is 120 mJ
a continuous drain current (ID) of 60A
the turn-off delay time is 9 ns
based on its rated peak drain current 240A.
IPD60N10S412ATMA1 Applications
There are a lot of Infineon Technologies
IPD60N10S412ATMA1 applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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