IPD60N10S4L12ATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Series :

Automotive, AEC-Q101, HEXFET®

Gate Charge (Qg) (Max) @ Vgs :

49nC @ 10V

Fall Time (Typ) :

21 ns

Case Connection :

DRAIN

JESD-609 Code :

e3

Transistor Element Material :

SILICON

Halogen Free :

Halogen Free

Lead Free :

Contains Lead

Number of Channels :

1

Power Dissipation-Max :

94W Tc

Element Configuration :

Single

Rise Time :

3ns

Turn On Delay Time :

4 ns

Reach Compliance Code :

not_compliant

Operating Mode :

ENHANCEMENT MODE

Gate to Source Voltage (Vgs) :

16V

JESD-30 Code :

R-PSSO-G2

Rds On (Max) @ Id, Vgs :

12m Ω @ 60A, 10V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Current - Continuous Drain (Id) @ 25°C :

60A Tc

Factory Lead Time :

14 Weeks

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Pulsed Drain Current-Max (IDM) :

240A

Input Capacitance (Ciss) (Max) @ Vds :

3170pF @ 25V

Vgs(th) (Max) @ Id :

2.1V @ 46μA

Mount :

Surface Mount

Mounting Type :

Surface Mount

RoHS Status :

ROHS3 Compliant

Weight :

3.949996g

Terminal Form :

Gull wing

Packaging :

Tape and Reel (TR)

ECCN Code :

EAR99

Operating Temperature :

-55°C~175°C TJ

Published :

2011

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Dual Supply Voltage :

100V

Number of Terminations :

2

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Vgs (Max) :

±16V

Continuous Drain Current (ID) :

60A

Drain to Source Breakdown Voltage :

100V

FET Type :

N-Channel

Turn-Off Delay Time :

20 ns

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Terminal Finish :

Tin (Sn)

Number of Pins :

3