IPD60R180P7ATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Terminations :

2

Gate Charge (Qg) (Max) @ Vgs :

25nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

1081pF @ 400V

Pulsed Drain Current-Max (IDM) :

53A

JESD-609 Code :

e3

Series :

CoolMOS™ P7

Terminal Form :

Gull wing

Drain to Source Voltage (Vdss) :

650V

Pbfree Code :

yes

Terminal Finish :

Tin (Sn)

Drain-source On Resistance-Max :

0.18ohm

ECCN Code :

EAR99

Drive Voltage (Max Rds On,Min Rds On) :

10V

Vgs(th) (Max) @ Id :

4V @ 280μA

DS Breakdown Voltage-Min :

600V

Operating Mode :

ENHANCEMENT MODE

Configuration :

SINGLE WITH BUILT-IN DIODE

Packaging :

Tape and Reel (TR)

Published :

2014

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Rds On (Max) @ Id, Vgs :

180m Ω @ 5.6A, 10V

Power Dissipation-Max :

72W Tc

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Case Connection :

DRAIN

Operating Temperature :

-55°C~150°C TJ

Number of Elements :

1

Vgs (Max) :

±20V

Factory Lead Time :

18 Weeks

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

RoHS Status :

ROHS3 Compliant

JESD-30 Code :

R-PSSO-G2

Surface Mount :

yes

Reach Compliance Code :

not_compliant

Transistor Element Material :

SILICON

FET Type :

N-Channel

Transistor Application :

SWITCHING

Terminal Position :

Single

Current - Continuous Drain (Id) @ 25°C :

18A Tc

Mounting Type :

Surface Mount

Avalanche Energy Rating (Eas) :

56 mJ