IPD60R1K4C6ATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Finish :

Tin (Sn)

Drive Voltage (Max Rds On,Min Rds On) :

10V

Series :

CoolMOS™ C6

Mounting Type :

Surface Mount

Terminal Position :

Single

Vgs (Max) :

±20V

Operating Temperature :

-55°C~150°C TJ

Halogen Free :

Halogen Free

Factory Lead Time :

12 Weeks

JESD-30 Code :

R-PSSO-G2

Pulsed Drain Current-Max (IDM) :

8A

Vgs(th) (Max) @ Id :

3.5V @ 90µA

Avalanche Energy Rating (Eas) :

26 mJ

Continuous Drain Current (ID) :

3.2A

Reach Compliance Code :

not_compliant

Max Dual Supply Voltage :

600V

Pbfree Code :

yes

Gate Charge (Qg) (Max) @ Vgs :

9.4nC @ 10V

Packaging :

Tape and Reel (TR)

Configuration :

SINGLE WITH BUILT-IN DIODE

Power Dissipation-Max :

28.4W Tc

Transistor Application :

SWITCHING

RoHS Status :

ROHS3 Compliant

Lead Free :

Contains Lead

FET Type :

N-Channel

Published :

2008

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Input Capacitance (Ciss) (Max) @ Vds :

200pF @ 100V

Number of Terminations :

2

Transistor Element Material :

SILICON

Operating Mode :

ENHANCEMENT MODE

Current - Continuous Drain (Id) @ 25°C :

3.2A Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Form :

Gull wing

Mount :

Surface Mount

Rds On (Max) @ Id, Vgs :

1.4 Ω @ 1.1A, 10V

Number of Elements :

1

JESD-609 Code :

e3

Case Connection :

DRAIN

Number of Pins :

3