IPD600N25N3GBTMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Elements :

1

Drain Current-Max (Abs) (ID) :

25A

JEDEC-95 Code :

TO-252AA

Pulsed Drain Current-Max (IDM) :

100A

RoHS Status :

RoHS Compliant

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Configuration :

SINGLE WITH BUILT-IN DIODE

Drain to Source Voltage (Vdss) :

250V

Published :

2011

Reach Compliance Code :

Compliant

ECCN Code :

EAR99

Terminal Form :

Gull wing

Number of Terminations :

2

Packaging :

Tape and Reel (TR)

JESD-30 Code :

R-PSSO-G2

Vgs (Max) :

±20V

Gate Charge (Qg) (Max) @ Vgs :

29nC @ 10V

Mounting Type :

Surface Mount

Pin Count :

4

Case Connection :

DRAIN

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Operating Mode :

ENHANCEMENT MODE

Terminal Finish :

MATTE TIN

Vgs(th) (Max) @ Id :

4V @ 90µA

DS Breakdown Voltage-Min :

250V

Operating Temperature :

-55°C~175°C TJ

Input Capacitance (Ciss) (Max) @ Vds :

2350pF @ 100V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drive Voltage (Max Rds On,Min Rds On) :

10V

Drain-source On Resistance-Max :

0.06Ohm

Pbfree Code :

yes

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Transistor Application :

SWITCHING

Terminal Position :

Single

FET Type :

N-Channel

Current - Continuous Drain (Id) @ 25°C :

25A Tc

Power Dissipation-Max :

136W Tc

JESD-609 Code :

e3

Transistor Element Material :

SILICON

Surface Mount :

yes

Rds On (Max) @ Id, Vgs :

60m Ω @ 25A, 10V

Series :

OptiMOS™

Avalanche Energy Rating (Eas) :

210 mJ