IPD60R1K0CEATMA1
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- Mfr.Part #
- IPD60R1K0CEATMA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 4.3A TO252-3
- Stock
- 33,722
- In Stock ：
- 33,722
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Weight :
- 3.949996g
- Moisture Sensitivity Level (MSL) :
- 3 (168 Hours)
- Lead Free :
- Lead Free
- Number of Elements :
- 1
- Number of Terminations :
- 2
- Rds On (Max) @ Id, Vgs :
- 1 Ω @ 1.5A, 10V
- ECCN Code :
- EAR99
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Packaging :
- Tape and Reel (TR)
- Drain-source On Resistance-Max :
- 1Ohm
- Gate to Source Voltage (Vgs) :
- 20V
- Transistor Element Material :
- SILICON
- DS Breakdown Voltage-Min :
- 600V
- Terminal Form :
- Gull wing
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- JESD-30 Code :
- R-PSSO-G2
- RoHS Status :
- RoHS Compliant
- Published :
- 2015
- Power Dissipation-Max :
- 37W Tc
- Element Configuration :
- Single
- Fall Time (Typ) :
- 13 ns
- Input Capacitance (Ciss) (Max) @ Vds :
- 280pF @ 100V
- Mounting Type :
- Surface Mount
- Rise Time :
- 8ns
- Operating Temperature :
- -40°C~150°C TJ
- Series :
- CoolMOS™ CE
- Mount :
- Surface Mount
- Case Connection :
- DRAIN
- Vgs (Max) :
- ±20V
- Vgs(th) (Max) @ Id :
- 3.5V @ 130μA
- Drain to Source Voltage (Vdss) :
- 600V
- Gate Charge (Qg) (Max) @ Vgs :
- 13nC @ 10V
- Transistor Application :
- SWITCHING
- Number of Channels :
- 1
- Operating Mode :
- ENHANCEMENT MODE
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Turn-Off Delay Time :
- 60 ns
- Avalanche Energy Rating (Eas) :
- 46 mJ
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Continuous Drain Current (ID) :
- 4.3A
- Turn On Delay Time :
- 10 ns
- Current - Continuous Drain (Id) @ 25°C :
- 4.3A Tc
- FET Type :
- N-Channel
- Pbfree Code :
- yes
- Datasheets
- IPD60R1K0CEATMA1
N-Channel Tape & Reel (TR) 1 Ω @ 1.5A, 10V ±20V 280pF @ 100V 13nC @ 10V 600V TO-252-3, DPak (2 Leads + Tab), SC-63
IPD60R1K0CEATMA1 Overview
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 46 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 280pF @ 100V.This device conducts a continuous drain current (ID) of 4.3A, which is the maximum continuous current transistor can conduct.When the device is turned off, a turn-off delay time of 60 ns occurs as the input capacitance charges before drain current conduction commences.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 10 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.A normal operation of the DS requires keeping the breakdown voltage above 600V.This transistor requires a drain-source voltage (Vdss) of 600V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
IPD60R1K0CEATMA1 Features
the avalanche energy rating (Eas) is 46 mJ
a continuous drain current (ID) of 4.3A
the turn-off delay time is 60 ns
a 600V drain to source voltage (Vdss)
IPD60R1K0CEATMA1 Applications
There are a lot of Infineon Technologies
IPD60R1K0CEATMA1 applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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