IPD60R180P7SAUMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Mode :

ENHANCEMENT MODE

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

4V @ 280μA

RoHS Status :

ROHS3 Compliant

Drive Voltage (Max Rds On,Min Rds On) :

10V

Factory Lead Time :

18 Weeks

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drain to Source Breakdown Voltage :

600V

ECCN Code :

EAR99

Published :

2014

Height :

2.55mm

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Terminal Finish :

Tin (Sn)

Number of Elements :

1

Pulsed Drain Current-Max (IDM) :

53A

Avalanche Energy Rating (Eas) :

56 mJ

Rds On (Max) @ Id, Vgs :

180m Ω @ 5.6A, 10V

Max Junction Temperature (Tj) :

150°C

JESD-30 Code :

R-PSSO-G2

Number of Terminations :

2

Input Capacitance (Ciss) (Max) @ Vds :

1081pF @ 400V

Turn-Off Delay Time :

85 ns

Operating Temperature :

-40°C~150°C TJ

Terminal Position :

Single

Current - Continuous Drain (Id) @ 25°C :

18A Tc

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Packaging :

Tape and Reel (TR)

Transistor Application :

SWITCHING

Terminal Form :

Gull wing

Reach Compliance Code :

not_compliant

Turn On Delay Time :

14 ns

Surface Mount :

yes

Power Dissipation-Max :

72W Tc

JESD-609 Code :

e3

Configuration :

SINGLE WITH BUILT-IN DIODE

Gate to Source Voltage (Vgs) :

20V

Continuous Drain Current (ID) :

18A

Power Dissipation :

72W

FET Type :

N-Channel

Mounting Type :

Surface Mount

Number of Channels :

1

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Gate Charge (Qg) (Max) @ Vgs :

25nC @ 10V

Series :

CoolMOS™ P7

Transistor Element Material :

SILICON