IPD60R180P7SAUMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

ECCN Code :

EAR99

Number of Elements :

1

Operating Mode :

ENHANCEMENT MODE

Height :

2.55mm

JESD-30 Code :

R-PSSO-G2

Max Junction Temperature (Tj) :

150°C

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Operating Temperature :

-40°C~150°C TJ

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Input Capacitance (Ciss) (Max) @ Vds :

1081pF @ 400V

Pulsed Drain Current-Max (IDM) :

53A

JESD-609 Code :

e3

Avalanche Energy Rating (Eas) :

56 mJ

Power Dissipation :

72W

Turn On Delay Time :

14 ns

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Factory Lead Time :

18 Weeks

Drain to Source Breakdown Voltage :

600V

Vgs (Max) :

±20V

Gate Charge (Qg) (Max) @ Vgs :

25nC @ 10V

Terminal Form :

Gull wing

Reach Compliance Code :

not_compliant

Terminal Position :

Single

FET Type :

N-Channel

Transistor Application :

SWITCHING

Rds On (Max) @ Id, Vgs :

180m Ω @ 5.6A, 10V

Mounting Type :

Surface Mount

Surface Mount :

yes

Published :

2014

Turn-Off Delay Time :

85 ns

Power Dissipation-Max :

72W Tc

RoHS Status :

ROHS3 Compliant

Series :

CoolMOS™ P7

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Terminations :

2

Number of Channels :

1

Configuration :

SINGLE WITH BUILT-IN DIODE

Gate to Source Voltage (Vgs) :

20V

Current - Continuous Drain (Id) @ 25°C :

18A Tc

Terminal Finish :

Tin (Sn)

Vgs(th) (Max) @ Id :

4V @ 280μA

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Continuous Drain Current (ID) :

18A

Packaging :

Tape and Reel (TR)

Transistor Element Material :

SILICON