IPD60R180C7ATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Transistor Application :

SWITCHING

Number of Terminations :

2

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Factory Lead Time :

18 Weeks

Input Capacitance (Ciss) (Max) @ Vds :

1080pF @ 400V

Mounting Type :

Surface Mount

Vgs(th) (Max) @ Id :

4V @ 260μA

Avalanche Energy Rating (Eas) :

53 mJ

Gate Charge (Qg) (Max) @ Vgs :

24nC @ 10V

Terminal Position :

Single

Drive Voltage (Max Rds On,Min Rds On) :

10V

Power Dissipation-Max :

68W Tc

JESD-609 Code :

e3

Packaging :

Tape and Reel (TR)

Case Connection :

DRAIN

Lead Free :

Contains Lead

Mount :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pulsed Drain Current-Max (IDM) :

45A

Number of Elements :

1

RoHS Status :

ROHS3 Compliant

Transistor Element Material :

SILICON

Terminal Form :

Gull wing

Pbfree Code :

yes

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Current - Continuous Drain (Id) @ 25°C :

13A Tc

Rds On (Max) @ Id, Vgs :

180m Ω @ 5.3A, 10V

Reach Compliance Code :

not_compliant

Series :

CoolMOS™ C7

Halogen Free :

Halogen Free

Published :

2008

Operating Mode :

ENHANCEMENT MODE

Continuous Drain Current (ID) :

13A

Terminal Finish :

Tin (Sn)

Configuration :

SINGLE WITH BUILT-IN DIODE

JESD-30 Code :

R-PSSO-G2

Max Dual Supply Voltage :

600V

Drain-source On Resistance-Max :

0.18ohm

Operating Temperature :

-55°C~150°C TJ

FET Type :

N-Channel

Vgs (Max) :

±20V