IPD65R950CFDATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Turn On Delay Time :

9 ns

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Rds On (Max) @ Id, Vgs :

950m Ω @ 1.5A, 10V

JEDEC-95 Code :

TO-252AA

Pulsed Drain Current-Max (IDM) :

11A

Number of Terminations :

2

Series :

CoolMOS™

Packaging :

Tape and Reel (TR)

Power Dissipation-Max :

36.7W Tc

Gate Charge (Qg) (Max) @ Vgs :

14.1nC @ 10V

Operating Temperature :

-55°C~150°C TJ

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Operating Mode :

ENHANCEMENT MODE

Transistor Application :

SWITCHING

Rise Time :

6.5ns

Terminal Form :

Gull wing

Mounting Type :

Surface Mount

Terminal Position :

Single

Turn-Off Delay Time :

43 ns

Transistor Element Material :

SILICON

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Vgs(th) (Max) @ Id :

4.5V @ 200μA

JESD-30 Code :

R-PSSO-G2

Drain-source On Resistance-Max :

0.95Ohm

Avalanche Energy Rating (Eas) :

50 mJ

FET Type :

N-Channel

Vgs (Max) :

±20V

Max Dual Supply Voltage :

650V

Case Connection :

DRAIN

Configuration :

SINGLE WITH BUILT-IN DIODE

Drive Voltage (Max Rds On,Min Rds On) :

10V

Factory Lead Time :

18 Weeks

Gate to Source Voltage (Vgs) :

20V

Number of Pins :

3

Published :

2006

Mount :

Surface Mount

Number of Elements :

1

Input Capacitance (Ciss) (Max) @ Vds :

380pF @ 100V

Current - Continuous Drain (Id) @ 25°C :

3.9A Tc

RoHS Status :

ROHS3 Compliant

Continuous Drain Current (ID) :

3.9A

Additional Feature :

High Reliability

Drain to Source Breakdown Voltage :

700V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Fall Time (Typ) :

13.8 ns