IPD65R660CFDBTMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Mounting Type :

Surface Mount

Packaging :

Tape and Reel (TR)

Mount :

Surface Mount

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Rds On (Max) @ Id, Vgs :

660m Ω @ 2.1A, 10V

Terminal Position :

Single

JESD-30 Code :

R-PSSO-G2

ECCN Code :

EAR99

Turn On Delay Time :

9 ns

Terminal Form :

Gull wing

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Gate to Source Voltage (Vgs) :

20V

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

RoHS Status :

ROHS3 Compliant

Rise Time :

8ns

Input Capacitance (Ciss) (Max) @ Vds :

615pF @ 100V

Series :

CoolMOS™

Vgs(th) (Max) @ Id :

4.5V @ 200μA

Current - Continuous Drain (Id) @ 25°C :

6A Tc

Factory Lead Time :

16 Weeks

Pin Count :

3

Operating Temperature :

-55°C~150°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pbfree Code :

No

Vgs (Max) :

±20V

Turn-Off Delay Time :

40 ns

Transistor Application :

SWITCHING

Operating Mode :

ENHANCEMENT MODE

Gate Charge (Qg) (Max) @ Vgs :

22nC @ 10V

Configuration :

SINGLE WITH BUILT-IN DIODE

Drain-source On Resistance-Max :

0.66Ohm

Number of Terminations :

2

Case Connection :

DRAIN

Drive Voltage (Max Rds On,Min Rds On) :

10V

FET Type :

N-Channel

Max Dual Supply Voltage :

650V

Transistor Element Material :

SILICON

Fall Time (Typ) :

10 ns

Qualification Status :

Not Qualified

Drain Current-Max (Abs) (ID) :

6A

Published :

2011

Power Dissipation-Max :

62.5W Tc

Number of Elements :

1

Lead Free :

Lead Free

Continuous Drain Current (ID) :

6A

Power Dissipation :

62.5W