IPD65R660CFDAATMA1
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- Mfr.Part #
- IPD65R660CFDAATMA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 650V 6A TO252-3
- Stock
- 4,895
- In Stock ：
- 4,895
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Number of Elements :
- 1
- Published :
- 2008
- Current - Continuous Drain (Id) @ 25°C :
- 6A Tc
- Mount :
- Surface Mount
- Gate Charge (Qg) (Max) @ Vgs :
- 20nC @ 10V
- Mounting Type :
- Surface Mount
- Case Connection :
- DRAIN
- Lead Free :
- Contains Lead
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Drain Current-Max (Abs) (ID) :
- 6A
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Continuous Drain Current (ID) :
- 6A
- Max Dual Supply Voltage :
- 650V
- Operating Temperature :
- -40°C~150°C TJ
- Power Dissipation-Max :
- 62.5W Tc
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Fall Time (Typ) :
- 10 ns
- Drain-source On Resistance-Max :
- 0.66Ohm
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Terminal Finish :
- Tin (Sn)
- Vgs (Max) :
- ±20V
- Turn On Delay Time :
- 9 ns
- Vgs(th) (Max) @ Id :
- 4.5V @ 214.55μA
- Halogen Free :
- Halogen Free
- Avalanche Energy Rating (Eas) :
- 115 mJ
- Number of Pins :
- 3
- Gate to Source Voltage (Vgs) :
- 20V
- Series :
- Automotive, AEC-Q101, CoolMOS™
- Input Capacitance (Ciss) (Max) @ Vds :
- 543pF @ 100V
- Reach Compliance Code :
- not_compliant
- Terminal Position :
- Single
- Number of Terminations :
- 2
- Rise Time :
- 8ns
- JESD-30 Code :
- R-PSSO-G2
- JESD-609 Code :
- e3
- Transistor Element Material :
- SILICON
- FET Type :
- N-Channel
- Factory Lead Time :
- 18 Weeks
- Packaging :
- Tape and Reel (TR)
- Transistor Application :
- SWITCHING
- RoHS Status :
- ROHS3 Compliant
- Pulsed Drain Current-Max (IDM) :
- 17A
- Operating Mode :
- ENHANCEMENT MODE
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Turn-Off Delay Time :
- 40 ns
- JEDEC-95 Code :
- TO-252AA
- Rds On (Max) @ Id, Vgs :
- 660m Ω @ 3.22A, 10V
- Terminal Form :
- Gull wing
- Datasheets
- IPD65R660CFDAATMA1
N-Channel Tape & Reel (TR) 660m Ω @ 3.22A, 10V ±20V 543pF @ 100V 20nC @ 10V TO-252-3, DPak (2 Leads + Tab), SC-63
IPD65R660CFDAATMA1 Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 115 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 543pF @ 100V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.There is no drain current on this device since the maximum continuous current it can conduct is 6A.As a result of its turn-off delay time, which is 40 ns, the device has taken time to charge its input capacitance before drain current conduction begins.There is a peak drain current of 17A, its maximum pulsed drain current.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 9 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.The maximum dual supply voltage can be supported by 650V.In addition to reducing power consumption, this device uses drive voltage (10V).
IPD65R660CFDAATMA1 Features
the avalanche energy rating (Eas) is 115 mJ
a continuous drain current (ID) of 6A
the turn-off delay time is 40 ns
based on its rated peak drain current 17A.
IPD65R660CFDAATMA1 Applications
There are a lot of Infineon Technologies
IPD65R660CFDAATMA1 applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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