IPD65R650CEAUMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Terminal Finish :

Tin (Sn)

Avalanche Energy Rating (Eas) :

142 mJ

Number of Terminations :

2

Operating Temperature :

-40°C~150°C TJ

Published :

2013

Case Connection :

DRAIN

Vgs(th) (Max) @ Id :

3.5V @ 210µA

Halogen Free :

Halogen Free

Number of Elements :

1

Gate Charge (Qg) (Max) @ Vgs :

23nC @ 10V

Rds On (Max) @ Id, Vgs :

650m Ω @ 2.1A, 10V

Operating Mode :

ENHANCEMENT MODE

Continuous Drain Current (ID) :

7A

Reach Compliance Code :

not_compliant

RoHS Status :

ROHS3 Compliant

Pbfree Code :

yes

Vgs (Max) :

±20V

Transistor Element Material :

SILICON

Current - Continuous Drain (Id) @ 25°C :

7A Tc

FET Type :

N-Channel

Configuration :

SINGLE WITH BUILT-IN DIODE

Drain-source On Resistance-Max :

0.65Ohm

Pulsed Drain Current-Max (IDM) :

18A

Mount :

Surface Mount

Power Dissipation-Max :

86W Tc

Input Capacitance (Ciss) (Max) @ Vds :

440pF @ 100V

Lead Free :

Contains Lead

Max Dual Supply Voltage :

650V

Terminal Position :

Single

Factory Lead Time :

18 Weeks

JESD-30 Code :

R-PSSO-G2

JESD-609 Code :

e3

Transistor Application :

SWITCHING

Mounting Type :

Surface Mount

Series :

CoolMOS™ CE

Terminal Form :

Gull wing

Drive Voltage (Max Rds On,Min Rds On) :

10V

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

ECCN Code :

EAR99

Packaging :

Tape and Reel (TR)