IPD65R650CEATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Position :

Single

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Transistor Application :

SWITCHING

Drain to Source Breakdown Voltage :

650V

Power Dissipation-Max :

86W Tc

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Current - Continuous Drain (Id) @ 25°C :

10.1A Tc

Number of Channels :

1

Number of Terminations :

2

Mount :

Surface Mount

FET Type :

N-Channel

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Gate Charge (Qg) (Max) @ Vgs :

23nC @ 10V

Continuous Drain Current (ID) :

10.1A

Terminal Form :

Gull wing

Vgs(th) (Max) @ Id :

3.5V @ 0.21mA

Number of Elements :

1

Weight :

3.949996g

Rds On (Max) @ Id, Vgs :

650m Ω @ 2.1A, 10V

Vgs (Max) :

±20V

Drain-source On Resistance-Max :

0.65Ohm

Operating Temperature :

-40°C~150°C TJ

Transistor Element Material :

SILICON

Operating Mode :

ENHANCEMENT MODE

RoHS Status :

RoHS Compliant

JESD-30 Code :

R-PSSO-G2

Series :

CoolMOS™

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Capacitance (Ciss) (Max) @ Vds :

440pF @ 100V

Mounting Type :

Surface Mount

Configuration :

SINGLE WITH BUILT-IN DIODE

FET Feature :

Super Junction

Case Connection :

DRAIN

Pbfree Code :

yes

Drive Voltage (Max Rds On,Min Rds On) :

10V

Packaging :

Tape and Reel (TR)

Published :

2015