IPD65R600E6BTMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Number of Terminations :

2

Drive Voltage (Max Rds On,Min Rds On) :

10V

Drain to Source Voltage (Vdss) :

650V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Terminal Finish :

Tin (Sn)

FET Type :

N-Channel

Pulsed Drain Current-Max (IDM) :

18A

Vgs(th) (Max) @ Id :

3.5V @ 210µA

Terminal Form :

Gull wing

Packaging :

Tape and Reel (TR)

Vgs (Max) :

±20V

Pin Count :

4

DS Breakdown Voltage-Min :

650V

Drain-source On Resistance-Max :

0.6Ohm

Case Connection :

DRAIN

Input Capacitance (Ciss) (Max) @ Vds :

440pF @ 100V

Series :

CoolMOS™

Current - Continuous Drain (Id) @ 25°C :

7.3A Tc

Operating Mode :

ENHANCEMENT MODE

JESD-30 Code :

R-PSSO-G2

Terminal Position :

Single

Power Dissipation-Max :

63W Tc

Operating Temperature :

-55°C~150°C TJ

Published :

2008

Configuration :

SINGLE WITH BUILT-IN DIODE

Transistor Element Material :

SILICON

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Rds On (Max) @ Id, Vgs :

600m Ω @ 2.1A, 10V

Transistor Application :

SWITCHING

Avalanche Energy Rating (Eas) :

142 mJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate Charge (Qg) (Max) @ Vgs :

23nC @ 10V

Number of Elements :

1

Surface Mount :

yes

Mounting Type :

Surface Mount

Pbfree Code :

No

Qualification Status :

Not Qualified

RoHS Status :

RoHS Compliant

JESD-609 Code :

e3

Reach Compliance Code :

not_compliant