IPD65R600E6ATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Packaging :

Tape and Reel (TR)

Length :

6.73mm

JESD-30 Code :

R-PSSO-G2

Reach Compliance Code :

not_compliant

Turn-Off Delay Time :

64 ns

Terminal Form :

Gull wing

Mounting Type :

Surface Mount

Number of Pins :

3

Surface Mount :

yes

Turn On Delay Time :

10 ns

Operating Temperature :

-55°C~150°C TJ

Power Dissipation :

63W

Drain to Source Breakdown Voltage :

700V

Transistor Application :

SWITCHING

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Gate Charge (Qg) (Max) @ Vgs :

23nC @ 10V

Qualification Status :

Not Qualified

Rise Time :

8ns

JESD-609 Code :

e3

Factory Lead Time :

12 Weeks

Drive Voltage (Max Rds On,Min Rds On) :

10V

RoHS Status :

ROHS3 Compliant

Number of Terminations :

2

Input Capacitance (Ciss) (Max) @ Vds :

440pF @ 100V

Fall Time (Typ) :

11 ns

Current - Continuous Drain (Id) @ 25°C :

7.3A Tc

Vgs (Max) :

±20V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Height :

2.41mm

Element Configuration :

Single

Vgs(th) (Max) @ Id :

3.5V @ 210µA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Halogen Free :

Halogen Free

Pin Count :

4

Transistor Element Material :

SILICON

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Continuous Drain Current (ID) :

7.3A

Pbfree Code :

No

Gate to Source Voltage (Vgs) :

20V

Series :

CoolMOS™ E6

FET Type :

N-Channel

Rds On (Max) @ Id, Vgs :

600m Ω @ 2.1A, 10V

Width :

6.22mm

Operating Mode :

ENHANCEMENT MODE

Terminal Finish :

Tin (Sn)

Case Connection :

DRAIN

Pulsed Drain Current-Max (IDM) :

18A

Power Dissipation-Max :

63W Tc

Drain-source On Resistance-Max :

0.6Ohm

Number of Elements :

1

Avalanche Energy Rating (Eas) :

142 mJ

Published :

2008

Drain to Source Voltage (Vdss) :

650V