IPD65R600C6BTMA1
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- Mfr.Part #
- IPD65R600C6BTMA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 650V 7.3A TO252-3
- Stock
- 99,383
- In Stock ：
- 99,383
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Transistor Application :
- SWITCHING
- Reach Compliance Code :
- not_compliant
- Operating Mode :
- ENHANCEMENT MODE
- Max Dual Supply Voltage :
- 650V
- JESD-609 Code :
- e3
- Operating Temperature :
- -55°C~150°C TJ
- Mount :
- Surface Mount
- Gate Charge (Qg) (Max) @ Vgs :
- 23nC @ 10V
- RoHS Status :
- ROHS3 Compliant
- Vgs (Max) :
- ±20V
- Pbfree Code :
- No
- Transistor Element Material :
- SILICON
- Published :
- 2008
- Turn On Delay Time :
- 12 ns
- Qualification Status :
- Not Qualified
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Power Dissipation-Max :
- 63W Tc
- Continuous Drain Current (ID) :
- 7.3A
- Terminal Position :
- Single
- Number of Terminations :
- 2
- Fall Time (Typ) :
- 13 ns
- Current - Continuous Drain (Id) @ 25°C :
- 7.3A Tc
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Terminal Finish :
- Tin (Sn)
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Mounting Type :
- Surface Mount
- Rds On (Max) @ Id, Vgs :
- 600m Ω @ 2.1A, 10V
- Gate to Source Voltage (Vgs) :
- 20V
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Form :
- Gull wing
- Avalanche Energy Rating (Eas) :
- 142 mJ
- Pin Count :
- 4
- Pulsed Drain Current-Max (IDM) :
- 18A
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Input Capacitance (Ciss) (Max) @ Vds :
- 440pF @ 100V
- JESD-30 Code :
- R-PSSO-G2
- Series :
- CoolMOS™
- Case Connection :
- DRAIN
- Number of Elements :
- 1
- Factory Lead Time :
- 18 Weeks
- Number of Pins :
- 3
- FET Type :
- N-Channel
- Vgs(th) (Max) @ Id :
- 3.5V @ 210µA
- Packaging :
- Tape and Reel (TR)
- Turn-Off Delay Time :
- 80 ns
- Drain-source On Resistance-Max :
- 0.6Ohm
- Rise Time :
- 9ns
- Datasheets
- IPD65R600C6BTMA1
N-Channel Tape & Reel (TR) 600m Ω @ 2.1A, 10V ±20V 440pF @ 100V 23nC @ 10V TO-252-3, DPak (2 Leads + Tab), SC-63
IPD65R600C6BTMA1 Overview
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 142 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 440pF @ 100V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 7.3A continuous drain current (ID).Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 80 ns.Peak drain current is 18A, which is the maximum pulsed drain current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 12 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.In addition to 650V, it supports dual voltages up to the maximum.Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
IPD65R600C6BTMA1 Features
the avalanche energy rating (Eas) is 142 mJ
a continuous drain current (ID) of 7.3A
the turn-off delay time is 80 ns
based on its rated peak drain current 18A.
IPD65R600C6BTMA1 Applications
There are a lot of Infineon Technologies
IPD65R600C6BTMA1 applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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