IPD65R420CFDBTMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Pulsed Drain Current-Max (IDM) :

27A

Number of Terminations :

2

Vgs (Max) :

±20V

Configuration :

SINGLE WITH BUILT-IN DIODE

DS Breakdown Voltage-Min :

650V

Terminal Position :

Single

Drain Current-Max (Abs) (ID) :

8.7A

Series :

CoolMOS™

Operating Mode :

ENHANCEMENT MODE

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

FET Type :

N-Channel

Operating Temperature :

-55°C~150°C TJ

Power Dissipation-Max :

83.3W Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tape and Reel (TR)

Rds On (Max) @ Id, Vgs :

420m Ω @ 3.4A, 10V

Drain-source On Resistance-Max :

0.42Ohm

Drain to Source Voltage (Vdss) :

650V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Terminal Form :

Gull wing

Gate Charge (Qg) (Max) @ Vgs :

32nC @ 10V

Avalanche Energy Rating (Eas) :

227 mJ

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Number of Elements :

1

Pin Count :

4

Vgs(th) (Max) @ Id :

4.5V @ 340μA

Published :

2012

Pbfree Code :

No

JESD-30 Code :

R-PSSO-G2

Transistor Application :

SWITCHING

RoHS Status :

ROHS3 Compliant

Current - Continuous Drain (Id) @ 25°C :

8.7A Tc

Transistor Element Material :

SILICON

Mounting Type :

Surface Mount

Surface Mount :

yes

Input Capacitance (Ciss) (Max) @ Vds :

870pF @ 100V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED