IPD65R420CFDAATMA1
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- Mfr.Part #
- IPD65R420CFDAATMA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 650V 8.7A TO252-3
- Stock
- 2,495
- In Stock ：
- 2,495
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- JESD-609 Code :
- e3
- Number of Terminations :
- 2
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Rds On (Max) @ Id, Vgs :
- 420m Ω @ 3.4A, 10V
- Transistor Element Material :
- SILICON
- Current - Continuous Drain (Id) @ 25°C :
- 8.7A Tc
- Series :
- Automotive, AEC-Q101, CoolMOS™
- Terminal Finish :
- Tin (Sn)
- Transistor Application :
- SWITCHING
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- JESD-30 Code :
- R-PSSO-G2
- FET Type :
- N-Channel
- Packaging :
- Tape and Reel (TR)
- Mounting Type :
- Surface Mount
- Published :
- 2008
- Input Capacitance (Ciss) (Max) @ Vds :
- 870pF @ 100V
- Operating Mode :
- ENHANCEMENT MODE
- RoHS Status :
- ROHS3 Compliant
- Lead Free :
- Contains Lead
- Pulsed Drain Current-Max (IDM) :
- 27A
- Case Connection :
- DRAIN
- Operating Temperature :
- -40°C~150°C TJ
- Terminal Form :
- Gull wing
- Reach Compliance Code :
- not_compliant
- Avalanche Energy Rating (Eas) :
- 227 mJ
- Number of Elements :
- 1
- Factory Lead Time :
- 18 Weeks
- Drain-source On Resistance-Max :
- 0.42Ohm
- Halogen Free :
- Halogen Free
- Power Dissipation-Max :
- 83.3W Tc
- Max Dual Supply Voltage :
- 650V
- Vgs(th) (Max) @ Id :
- 4.5V @ 345μA
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Terminal Position :
- Single
- Continuous Drain Current (ID) :
- 8.7A
- Gate Charge (Qg) (Max) @ Vgs :
- 32nC @ 10V
- Vgs (Max) :
- ±20V
- Mount :
- Surface Mount
- Datasheets
- IPD65R420CFDAATMA1
N-Channel Tape & Reel (TR) 420m Ω @ 3.4A, 10V ±20V 870pF @ 100V 32nC @ 10V TO-252-3, DPak (2 Leads + Tab), SC-63
IPD65R420CFDAATMA1 Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 227 mJ.A device's maximum input capacitance is 870pF @ 100V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 8.7A for this device. Drain current refers to the capacity of the device to conduct continuous current.Its maximum pulsed drain current is 27A, which is also its maximum rating peak drainage current.Powered by 650V, it supports maximum dual supply voltages.This device uses no drive voltage (10V) to reduce its overall power consumption.
IPD65R420CFDAATMA1 Features
the avalanche energy rating (Eas) is 227 mJ
a continuous drain current (ID) of 8.7A
based on its rated peak drain current 27A.
IPD65R420CFDAATMA1 Applications
There are a lot of Infineon Technologies
IPD65R420CFDAATMA1 applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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