IPD65R400CEAUMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max :

118W Tc

Avalanche Energy Rating (Eas) :

215 mJ

Rds On (Max) @ Id, Vgs :

400m Ω @ 3.2A, 10V

Configuration :

SINGLE WITH BUILT-IN DIODE

Drain-source On Resistance-Max :

0.4Ohm

Terminal Form :

Gull wing

Gate Charge (Qg) (Max) @ Vgs :

39nC @ 10V

Pbfree Code :

yes

Current - Continuous Drain (Id) @ 25°C :

15.1A Tc

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Mounting Type :

Surface Mount

Vgs(th) (Max) @ Id :

3.5V @ 320µA

Terminal Position :

Single

Number of Elements :

1

Vgs (Max) :

±20V

Published :

2016

Transistor Application :

SWITCHING

Terminal Finish :

Tin (Sn)

Continuous Drain Current (ID) :

15.1A

Input Capacitance (Ciss) (Max) @ Vds :

710pF @ 100V

Packaging :

Tape and Reel (TR)

Number of Pins :

3

Transistor Element Material :

SILICON

Lead Free :

Contains Lead

Case Connection :

DRAIN

Factory Lead Time :

18 Weeks

JESD-609 Code :

e3

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Mount :

Surface Mount

Series :

CoolMOS™

Drive Voltage (Max Rds On,Min Rds On) :

10V

Reach Compliance Code :

not_compliant

FET Type :

N-Channel

JESD-30 Code :

R-PSSO-G2

FET Feature :

Super Junction

ECCN Code :

EAR99

Max Dual Supply Voltage :

650V

Operating Mode :

ENHANCEMENT MODE

Halogen Free :

Halogen Free

Operating Temperature :

-55°C~150°C TJ

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Terminations :

2

Peak Reflow Temperature (Cel) :

NOT SPECIFIED