IPD65R380E6ATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Rds On (Max) @ Id, Vgs :

380m Ω @ 3.2A, 10V

HTS Code :

8541.29.00.95

Turn-Off Delay Time :

57 ns

Current - Continuous Drain (Id) @ 25°C :

10.6A Tc

Terminal Form :

Gull wing

Drive Voltage (Max Rds On,Min Rds On) :

10V

Turn On Delay Time :

10 ns

Input Capacitance (Ciss) (Max) @ Vds :

710pF @ 100V

Number of Elements :

1

Terminal Finish :

Tin (Sn)

Number of Pins :

3

Terminal Position :

Single

RoHS Status :

ROHS3 Compliant

Published :

2008

Avalanche Energy Rating (Eas) :

215 mJ

Continuous Drain Current (ID) :

10.6A

Max Dual Supply Voltage :

650V

JESD-30 Code :

R-PSSO-G2

Mount :

Surface Mount

Factory Lead Time :

12 Weeks

Fall Time (Typ) :

8 ns

Series :

CoolMOS™ E6

Pulsed Drain Current-Max (IDM) :

29A

Packaging :

Tape and Reel (TR)

Operating Temperature :

-55°C~150°C TJ

JESD-609 Code :

e3

Operating Mode :

ENHANCEMENT MODE

FET Type :

N-Channel

Number of Terminations :

2

Case Connection :

DRAIN

Vgs(th) (Max) @ Id :

3.5V @ 320µA

Transistor Element Material :

SILICON

Transistor Application :

SWITCHING

Vgs (Max) :

±20V

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Power Dissipation-Max :

83W Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JEDEC-95 Code :

TO-252AA

Rise Time :

7ns

Configuration :

SINGLE WITH BUILT-IN DIODE

Reach Compliance Code :

not_compliant

Gate Charge (Qg) (Max) @ Vgs :

39nC @ 10V

Mounting Type :

Surface Mount

Gate to Source Voltage (Vgs) :

20V

ECCN Code :

EAR99

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED