IPD65R380C6BTMA1
- Mfr.Part #
- IPD65R380C6BTMA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 650V 10.6A TO252-3
- Stock
- 47,551
- In Stock :
- 47,551
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Operating Mode :
- ENHANCEMENT MODE
- Avalanche Energy Rating (Eas) :
- 215 mJ
- Rds On (Max) @ Id, Vgs :
- 380m Ω @ 3.2A, 10V
- Factory Lead Time :
- 26 Weeks
- Terminal Finish :
- Tin (Sn)
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Surface Mount :
- yes
- DS Breakdown Voltage-Min :
- 650V
- Current - Continuous Drain (Id) @ 25°C :
- 10.6A Tc
- Published :
- 2008
- Case Connection :
- DRAIN
- Series :
- CoolMOS™
- Drain to Source Voltage (Vdss) :
- 650V
- Pbfree Code :
- No
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Mounting Type :
- Surface Mount
- Number of Elements :
- 1
- Reach Compliance Code :
- not_compliant
- Number of Terminations :
- 2
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Qualification Status :
- Not Qualified
- Transistor Element Material :
- SILICON
- Terminal Form :
- Gull wing
- Drain Current-Max (Abs) (ID) :
- 10.6A
- JESD-609 Code :
- e3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Gate Charge (Qg) (Max) @ Vgs :
- 39nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 710pF @ 100V
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Power Dissipation-Max :
- 83W Tc
- Operating Temperature :
- -55°C~150°C TJ
- Terminal Position :
- Single
- Pulsed Drain Current-Max (IDM) :
- 29A
- Vgs(th) (Max) @ Id :
- 3.5V @ 320µA
- FET Type :
- N-Channel
- Drain-source On Resistance-Max :
- 0.38Ohm
- ECCN Code :
- EAR99
- JESD-30 Code :
- R-PSSO-G2
- Vgs (Max) :
- ±20V
- Transistor Application :
- SWITCHING
- RoHS Status :
- ROHS3 Compliant
- Pin Count :
- 4
- Packaging :
- Tape and Reel (TR)
- Datasheets
- IPD65R380C6BTMA1

N-Channel Tape & Reel (TR) 380m Ω @ 3.2A, 10V ±20V 710pF @ 100V 39nC @ 10V 650V TO-252-3, DPak (2 Leads + Tab), SC-63
IPD65R380C6BTMA1 Overview
When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 215 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 710pF @ 100V.The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 10.6A.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 29A.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 650V in order to maintain normal operation.Operating this transistor requires a 650V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.
IPD65R380C6BTMA1 Features
the avalanche energy rating (Eas) is 215 mJ
based on its rated peak drain current 29A.
a 650V drain to source voltage (Vdss)
IPD65R380C6BTMA1 Applications
There are a lot of Infineon Technologies
IPD65R380C6BTMA1 applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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