IPD65R380C6ATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Drain-source On Resistance-Max :

0.38Ohm

Drain Current-Max (Abs) (ID) :

10.6A

Published :

2008

Reach Compliance Code :

not_compliant

Operating Temperature :

-55°C~150°C TJ

Drive Voltage (Max Rds On,Min Rds On) :

10V

JESD-30 Code :

R-PSSO-G2

JESD-609 Code :

e3

Avalanche Energy Rating (Eas) :

215 mJ

Terminal Form :

Gull wing

Drain to Source Voltage (Vdss) :

650V

Number of Elements :

1

Number of Terminations :

2

Series :

CoolMOS™ C6

Packaging :

Tape and Reel (TR)

Factory Lead Time :

12 Weeks

Input Capacitance (Ciss) (Max) @ Vds :

710pF @ 100V

DS Breakdown Voltage-Min :

650V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate Charge (Qg) (Max) @ Vgs :

39nC @ 10V

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Case Connection :

DRAIN

Mounting Type :

Surface Mount

Rds On (Max) @ Id, Vgs :

380m Ω @ 3.2A, 10V

RoHS Status :

RoHS Compliant

Vgs (Max) :

±20V

Transistor Application :

SWITCHING

FET Type :

N-Channel

Transistor Element Material :

SILICON

Vgs(th) (Max) @ Id :

3.5V @ 320µA

Configuration :

SINGLE WITH BUILT-IN DIODE

Terminal Position :

Single

Power Dissipation-Max :

83W Tc

Current - Continuous Drain (Id) @ 25°C :

10.6A Tc

Terminal Finish :

Tin (Sn)

Surface Mount :

yes

Operating Mode :

ENHANCEMENT MODE

Pulsed Drain Current-Max (IDM) :

29A