IPD65R250E6XTMA1

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Mfr.Part #
IPD65R250E6XTMA1
Manufacturer
Infineon Technologies
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Datasheet
Download
Description
MOSFET N-CH 650V 16.1A TO252-3
Stock
3,818
In Stock :
3,818

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - FETs, MOSFETs - Single
Avalanche Energy Rating (Eas) :
290 mJ
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Halogen Free :
Halogen Free
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
RoHS Status :
ROHS3 Compliant
Operating Temperature :
-55°C~150°C TJ
Packaging :
Tape and Reel (TR)
Pulsed Drain Current-Max (IDM) :
46A
Pbfree Code :
yes
Turn On Delay Time :
11 ns
Published :
2008
Gate to Source Voltage (Vgs) :
20V
Mounting Type :
Surface Mount
Configuration :
SINGLE WITH BUILT-IN DIODE
Transistor Application :
SWITCHING
Drive Voltage (Max Rds On,Min Rds On) :
10V
Terminal Finish :
Tin (Sn)
Power Dissipation-Max :
208W Tc
Number of Elements :
1
ECCN Code :
EAR99
Mount :
Surface Mount
Terminal Form :
Gull wing
Pin Count :
3
Gate Charge (Qg) (Max) @ Vgs :
45nC @ 10V
JESD-30 Code :
R-PSSO-G2
Number of Terminations :
2
Max Dual Supply Voltage :
650V
Input Capacitance (Ciss) (Max) @ Vds :
950pF @ 1000V
Rds On (Max) @ Id, Vgs :
250m Ω @ 4.4A, 10V
Vgs(th) (Max) @ Id :
3.5V @ 400μA
Continuous Drain Current (ID) :
16.1A
Power Dissipation :
208W
Current - Continuous Drain (Id) @ 25°C :
16.1A Tc
Rise Time :
9ns
Series :
CoolMOS™ E6
Drain-source On Resistance-Max :
0.25Ohm
Drain to Source Breakdown Voltage :
700V
Lead Free :
Lead Free
Terminal Position :
Single
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
JESD-609 Code :
e3
Transistor Element Material :
SILICON
Turn-Off Delay Time :
76 ns
Factory Lead Time :
12 Weeks
FET Type :
N-Channel
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Vgs (Max) :
±20V
Operating Mode :
ENHANCEMENT MODE
Datasheets
IPD65R250E6XTMA1
Introducing Transistors - FETs, MOSFETs - Single Infineon Technologies IPD65R250E6XTMA1 from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63, Operating Temperature:-55°C~150°C TJ, Mounting Type:Surface Mount, Number of Terminations:2, IPD65R250E6XTMA1 pinout, IPD65R250E6XTMA1 datasheet PDF, IPD65R250E6XTMA1 amp .Beyond Transistors - FETs, MOSFETs - Single Infineon Technologies IPD65R250E6XTMA1 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Infineon Technologies IPD65R250E6XTMA1


N-Channel Tape & Reel (TR) 250m Ω @ 4.4A, 10V ±20V 950pF @ 1000V 45nC @ 10V TO-252-3, DPak (2 Leads + Tab), SC-63

IPD65R250E6XTMA1 Overview


As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 290 mJ.A device's maximum input capacitance is 950pF @ 1000V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 16.1A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=700V, and this device has a drain-to-source breakdown voltage of 700V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 76 ns.Its maximum pulsed drain current is 46A, which is also its maximum rating peak drainage current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 11 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.Powered by 650V, it supports maximum dual supply voltages.This device uses no drive voltage (10V) to reduce its overall power consumption.

IPD65R250E6XTMA1 Features


the avalanche energy rating (Eas) is 290 mJ
a continuous drain current (ID) of 16.1A
a drain-to-source breakdown voltage of 700V voltage
the turn-off delay time is 76 ns
based on its rated peak drain current 46A.


IPD65R250E6XTMA1 Applications


There are a lot of Infineon Technologies
IPD65R250E6XTMA1 applications of single MOSFETs transistors.


  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
  • DC-to-DC converters
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