IPD65R250E6

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Mfr.Part #
IPD65R250E6
Manufacturer
Infineon Technologies
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Datasheet
Download
Description
N-CHANNEL POWER MOSFET
Stock
6,877
In Stock :
6,877

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - FETs, MOSFETs - Single
JESD-609 Code :
e3
Pulsed Drain Current-Max (IDM) :
46A
Operating Temperature :
-55°C~150°C TJ
Transistor Element Material :
SILICON
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Avalanche Energy Rating (Eas) :
290 mJ
FET Type :
N-Channel
Factory Lead Time :
12 Weeks
Turn-Off Delay Time :
76 ns
Vgs (Max) :
±20V
Number of Terminations :
2
Terminal Finish :
Tin (Sn)
Pin Count :
3
Current - Continuous Drain (Id) @ 25°C :
16.1A Tc
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Mount :
Surface Mount
Operating Mode :
ENHANCEMENT MODE
Turn On Delay Time :
11 ns
Packaging :
Tape and Reel (TR)
Halogen Free :
Halogen Free
Terminal Form :
Gull wing
ECCN Code :
EAR99
Transistor Application :
SWITCHING
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Power Dissipation-Max :
208W Tc
Rise Time :
9ns
RoHS Status :
ROHS3 Compliant
Gate to Source Voltage (Vgs) :
20V
Drain to Source Breakdown Voltage :
700V
Input Capacitance (Ciss) (Max) @ Vds :
950pF @ 1000V
Lead Free :
Lead Free
Power Dissipation :
208W
Continuous Drain Current (ID) :
16.1A
Drive Voltage (Max Rds On,Min Rds On) :
10V
Max Dual Supply Voltage :
650V
Number of Elements :
1
Pbfree Code :
yes
Vgs(th) (Max) @ Id :
3.5V @ 400μA
Drain-source On Resistance-Max :
0.25Ohm
Terminal Position :
Single
Rds On (Max) @ Id, Vgs :
250m Ω @ 4.4A, 10V
Series :
CoolMOS™ E6
JESD-30 Code :
R-PSSO-G2
Mounting Type :
Surface Mount
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
Published :
2008
Gate Charge (Qg) (Max) @ Vgs :
45nC @ 10V
Configuration :
SINGLE WITH BUILT-IN DIODE
Datasheets
IPD65R250E6
Introducing Transistors - FETs, MOSFETs - Single Infineon Technologies IPD65R250E6 from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Number of Terminations:2, Mounting Type:Surface Mount, Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63, IPD65R250E6 pinout, IPD65R250E6 datasheet PDF, IPD65R250E6 amp .Beyond Transistors - FETs, MOSFETs - Single Infineon Technologies IPD65R250E6 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Infineon Technologies IPD65R250E6


N-Channel Tape & Reel (TR) 250m Ω @ 4.4A, 10V ±20V 950pF @ 1000V 45nC @ 10V TO-252-3, DPak (2 Leads + Tab), SC-63

IPD65R250E6XTMA1 Overview


As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 290 mJ.A device's maximum input capacitance is 950pF @ 1000V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 16.1A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=700V, and this device has a drain-to-source breakdown voltage of 700V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 76 ns.Its maximum pulsed drain current is 46A, which is also its maximum rating peak drainage current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 11 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.Powered by 650V, it supports maximum dual supply voltages.This device uses no drive voltage (10V) to reduce its overall power consumption.

IPD65R250E6XTMA1 Features


the avalanche energy rating (Eas) is 290 mJ
a continuous drain current (ID) of 16.1A
a drain-to-source breakdown voltage of 700V voltage
the turn-off delay time is 76 ns
based on its rated peak drain current 46A.


IPD65R250E6XTMA1 Applications


There are a lot of Infineon Technologies
IPD65R250E6XTMA1 applications of single MOSFETs transistors.


  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
  • DC-to-DC converters
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