IPD65R250C6XTMA1
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- Mfr.Part #
- IPD65R250C6XTMA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 650V 16.1A TO252-3
- Stock
- 4,449
- In Stock ：
- 4,449
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Series :
- CoolMOS™
- Terminal Finish :
- Tin (Sn)
- Rise Time :
- 11ns
- Turn-Off Delay Time :
- 100 ns
- FET Type :
- N-Channel
- Input Capacitance (Ciss) (Max) @ Vds :
- 950pF @ 100V
- Max Dual Supply Voltage :
- 650V
- Mount :
- Surface Mount
- Vgs (Max) :
- ±20V
- Case Connection :
- DRAIN
- JESD-30 Code :
- R-PSSO-G2
- Transistor Element Material :
- SILICON
- Packaging :
- Cut Tape (CT)
- Operating Mode :
- ENHANCEMENT MODE
- RoHS Status :
- RoHS Compliant
- Pin Count :
- 3
- Continuous Drain Current (ID) :
- 16.1A
- Vgs(th) (Max) @ Id :
- 3.5V @ 400μA
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Rds On (Max) @ Id, Vgs :
- 250m Ω @ 4.4A, 10V
- Number of Terminations :
- 2
- Avalanche Energy Rating (Eas) :
- 290 mJ
- Terminal Form :
- Gull wing
- Drain-source On Resistance-Max :
- 0.25Ohm
- Gate Charge (Qg) (Max) @ Vgs :
- 44nC @ 10V
- Gate to Source Voltage (Vgs) :
- 20V
- Turn On Delay Time :
- 13 ns
- Current - Continuous Drain (Id) @ 25°C :
- 16.1A Tc
- Number of Elements :
- 1
- JESD-609 Code :
- e3
- Transistor Application :
- SWITCHING
- Halogen Free :
- Halogen Free
- Drain to Source Breakdown Voltage :
- 700V
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Power Dissipation-Max :
- 208.3W Tc
- Fall Time (Typ) :
- 12 ns
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Lead Free :
- Lead Free
- Published :
- 2008
- Factory Lead Time :
- 12 Weeks
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mounting Type :
- Surface Mount
- Pbfree Code :
- yes
- Terminal Position :
- Single
- Pulsed Drain Current-Max (IDM) :
- 46A
- Operating Temperature :
- -55°C~150°C TJ
- Datasheets
- IPD65R250C6XTMA1
N-Channel Cut Tape (CT) 250m Ω @ 4.4A, 10V ±20V 950pF @ 100V 44nC @ 10V TO-252-3, DPak (2 Leads + Tab), SC-63
IPD65R250C6XTMA1 Overview
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 290 mJ.A device's maximal input capacitance is 950pF @ 100V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 16.1A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 700V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 100 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 46A, which is its maximum rated peak drain current.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 13 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.By using 650V, it can supply the maximum voltage from two sources.This device reduces its overall power consumption by using drive voltage (10V).
IPD65R250C6XTMA1 Features
the avalanche energy rating (Eas) is 290 mJ
a continuous drain current (ID) of 16.1A
a drain-to-source breakdown voltage of 700V voltage
the turn-off delay time is 100 ns
based on its rated peak drain current 46A.
IPD65R250C6XTMA1 Applications
There are a lot of Infineon Technologies
IPD65R250C6XTMA1 applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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