IPD65R225C7ATMA1
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- Mfr.Part #
- IPD65R225C7ATMA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 650V 11A TO252-3
- Stock
- 13,262
- In Stock ：
- 13,262
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Case Connection :
- DRAIN
- JESD-30 Code :
- R-PSSO-G2
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- FET Type :
- N-Channel
- Avalanche Energy Rating (Eas) :
- 48 mJ
- Terminal Form :
- Gull wing
- Fall Time (Typ) :
- 10 ns
- Mounting Type :
- Surface Mount
- Mount :
- Surface Mount
- Turn On Delay Time :
- 9 ns
- Lead Free :
- Contains Lead
- Packaging :
- Cut Tape (CT)
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Number of Pins :
- 3
- Factory Lead Time :
- 18 Weeks
- RoHS Status :
- ROHS3 Compliant
- JESD-609 Code :
- e3
- Drain-source On Resistance-Max :
- 0.225Ohm
- Terminal Position :
- Single
- Terminal Finish :
- Tin (Sn)
- Transistor Element Material :
- SILICON
- Reach Compliance Code :
- not_compliant
- Number of Terminations :
- 2
- Operating Temperature :
- -55°C~150°C TJ
- Gate to Source Voltage (Vgs) :
- 20V
- Operating Mode :
- ENHANCEMENT MODE
- Vgs (Max) :
- ±20V
- Continuous Drain Current (ID) :
- 11A
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Number of Elements :
- 1
- Power Dissipation :
- 63W
- Turn-Off Delay Time :
- 48 ns
- Rds On (Max) @ Id, Vgs :
- 225m Ω @ 4.8A, 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 996pF @ 400V
- Vgs(th) (Max) @ Id :
- 4V @ 240µA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Max Dual Supply Voltage :
- 650V
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Halogen Free :
- Halogen Free
- Series :
- CoolMOS™ C7
- Power Dissipation-Max :
- 63W Tc
- Rise Time :
- 6ns
- Published :
- 2013
- Transistor Application :
- SWITCHING
- Gate Charge (Qg) (Max) @ Vgs :
- 20nC @ 10V
- Current - Continuous Drain (Id) @ 25°C :
- 11A Tc
- Datasheets
- IPD65R225C7ATMA1
N-Channel Cut Tape (CT) 225m Ω @ 4.8A, 10V ±20V 996pF @ 400V 20nC @ 10V TO-252-3, DPak (2 Leads + Tab), SC-63
IPD65R225C7ATMA1 Overview
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 48 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 996pF @ 400V.This device conducts a continuous drain current (ID) of 11A, which is the maximum continuous current transistor can conduct.When the device is turned off, a turn-off delay time of 48 ns occurs as the input capacitance charges before drain current conduction commences.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 9 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.With 650V power, it supports a dual voltage supply of up to maximum.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
IPD65R225C7ATMA1 Features
the avalanche energy rating (Eas) is 48 mJ
a continuous drain current (ID) of 11A
the turn-off delay time is 48 ns
IPD65R225C7ATMA1 Applications
There are a lot of Infineon Technologies
IPD65R225C7ATMA1 applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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