IPD65R1K5CEAUMA1
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- Mfr.Part #
- IPD65R1K5CEAUMA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 700V 5.2A TO252-3
- Stock
- 41,738
- In Stock ：
- 41,738
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Power Dissipation-Max :
- 53W Tc
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- FET Type :
- N-Channel
- Operating Temperature :
- -40°C~150°C TJ
- Transistor Application :
- SWITCHING
- Rds On (Max) @ Id, Vgs :
- 1.5 Ω @ 1A, 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 225pF @ 100V
- Reach Compliance Code :
- not_compliant
- JESD-30 Code :
- R-PSSO-G2
- Number of Elements :
- 1
- Number of Terminations :
- 2
- Packaging :
- Tape and Reel (TR)
- Halogen Free :
- Halogen Free
- Vgs (Max) :
- ±20V
- Gate Charge (Qg) (Max) @ Vgs :
- 10.5nC @ 10V
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Lead Free :
- Contains Lead
- Terminal Form :
- Gull wing
- ECCN Code :
- EAR99
- RoHS Status :
- ROHS3 Compliant
- Mounting Type :
- Surface Mount
- Mount :
- Surface Mount
- Published :
- 2013
- Current - Continuous Drain (Id) @ 25°C :
- 5.2A Tc
- Max Dual Supply Voltage :
- 650V
- Avalanche Energy Rating (Eas) :
- 26 mJ
- Terminal Position :
- Single
- Vgs(th) (Max) @ Id :
- 3.5V @ 100µA
- Operating Mode :
- ENHANCEMENT MODE
- Transistor Element Material :
- SILICON
- Pulsed Drain Current-Max (IDM) :
- 8.3A
- Case Connection :
- DRAIN
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Factory Lead Time :
- 18 Weeks
- Drain to Source Voltage (Vdss) :
- 700V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Datasheets
- IPD65R1K5CEAUMA1
N-Channel Tape & Reel (TR) 1.5 Ω @ 1A, 10V ±20V 225pF @ 100V 10.5nC @ 10V 700V TO-252-3, DPak (2 Leads + Tab), SC-63
IPD65R1K5CEAUMA1 Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 26 mJ.A device's maximum input capacitance is 225pF @ 100V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its maximum pulsed drain current is 8.3A, which is also its maximum rating peak drainage current.Powered by 650V, it supports maximum dual supply voltages.To operate this transistor, you need to apply a 700V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.
IPD65R1K5CEAUMA1 Features
the avalanche energy rating (Eas) is 26 mJ
based on its rated peak drain current 8.3A.
a 700V drain to source voltage (Vdss)
IPD65R1K5CEAUMA1 Applications
There are a lot of Infineon Technologies
IPD65R1K5CEAUMA1 applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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