IPD65R1K4CFDBTMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Elements :

1

Mounting Type :

Surface Mount

FET Type :

N-Channel

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Continuous Drain Current (ID) :

2.8A

Gate to Source Voltage (Vgs) :

20V

Fall Time (Typ) :

18.2 ns

Current - Continuous Drain (Id) @ 25°C :

2.8A Tc

Published :

2003

Max Dual Supply Voltage :

650V

ECCN Code :

EAR99

Power Dissipation-Max :

28.4W Tc

Drain to Source Breakdown Voltage :

700V

Rise Time :

6ns

Input Capacitance (Ciss) (Max) @ Vds :

262pF @ 100V

Series :

CoolMOS™

Pbfree Code :

No

Number of Pins :

3

Operating Temperature :

-55°C~150°C TJ

RoHS Status :

ROHS3 Compliant

Gate Charge (Qg) (Max) @ Vgs :

10nC @ 10V

Turn-Off Delay Time :

33 ns

Turn On Delay Time :

8 ns

Vgs (Max) :

±20V

Rds On (Max) @ Id, Vgs :

1.4 Ω @ 1A, 10V

Packaging :

Cut Tape (CT)

Factory Lead Time :

16 Weeks

Vgs(th) (Max) @ Id :

4.5V @ 100μA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drive Voltage (Max Rds On,Min Rds On) :

10V

Mount :

Surface Mount