IPD65R1K0CEAUMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Lead Free :

Contains Lead

Transistor Element Material :

SILICON

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Packaging :

Tape and Reel (TR)

Operating Mode :

ENHANCEMENT MODE

Number of Terminations :

2

Published :

2013

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Terminal Position :

Single

Pbfree Code :

yes

Operating Temperature :

-55°C~150°C TJ

Max Dual Supply Voltage :

650V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Configuration :

SINGLE WITH BUILT-IN DIODE

Pulsed Drain Current-Max (IDM) :

12A

Input Capacitance (Ciss) (Max) @ Vds :

328pF @ 100V

ECCN Code :

EAR99

Power Dissipation-Max :

68W Tc

Series :

CoolMOS™

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Continuous Drain Current (ID) :

7.2A

Terminal Form :

Gull wing

Halogen Free :

Halogen Free

Vgs(th) (Max) @ Id :

3.5V @ 200µA

Mount :

Surface Mount

Avalanche Energy Rating (Eas) :

50 mJ

FET Type :

N-Channel

Current - Continuous Drain (Id) @ 25°C :

7.2A Tc

Vgs (Max) :

±20V

RoHS Status :

ROHS3 Compliant

Gate Charge (Qg) (Max) @ Vgs :

15.3nC @ 10V

Number of Elements :

1

Drive Voltage (Max Rds On,Min Rds On) :

10V

Transistor Application :

SWITCHING

Drain-source On Resistance-Max :

1Ohm

JESD-30 Code :

R-PSSO-G2

Case Connection :

DRAIN

Mounting Type :

Surface Mount

FET Feature :

Super Junction

Factory Lead Time :

6 Weeks

Rds On (Max) @ Id, Vgs :

1 Ω @ 1.5A, 10V