IPD65R190C7ATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

RoHS Status :

ROHS3 Compliant

Mount :

Surface Mount

Halogen Free :

Halogen Free

Gate to Source Voltage (Vgs) :

20V

Vgs (Max) :

±20V

Current - Continuous Drain (Id) @ 25°C :

13A Tc

Series :

CoolMOS™ C7

Turn On Delay Time :

11 ns

Vgs(th) (Max) @ Id :

4V @ 290μA

Rds On (Max) @ Id, Vgs :

190mOhm @ 5.7A, 10V

Fall Time (Typ) :

9 ns

Supplier Device Package :

PG-TO252-3

Mounting Type :

Surface Mount

Max Operating Temperature :

150°C

Min Operating Temperature :

-55°C

Factory Lead Time :

18 Weeks

Number of Pins :

3

Continuous Drain Current (ID) :

13A

Drive Voltage (Max Rds On,Min Rds On) :

10V

Operating Temperature :

-55°C~150°C TJ

Rds On Max :

190 mΩ

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

23nC @ 10V

Published :

2008

Turn-Off Delay Time :

54 ns

Input Capacitance (Ciss) (Max) @ Vds :

1150pF @ 400V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Lead Free :

Contains Lead

Max Dual Supply Voltage :

650V

Drain to Source Resistance :

168MOhm

Drain to Source Voltage (Vdss) :

650V

Input Capacitance :

1.15nF

Packaging :

Tape and Reel (TR)

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Power Dissipation-Max :

72W Tc