IPD640N06LGBTMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Drain-source On Resistance-Max :

0.064Ohm

ECCN Code :

EAR99

Avalanche Energy Rating (Eas) :

43 mJ

Transistor Element Material :

SILICON

Transistor Application :

SWITCHING

Mounting Type :

Surface Mount

DS Breakdown Voltage-Min :

60V

Number of Elements :

1

Qualification Status :

Not Qualified

Packaging :

Tape and Reel (TR)

Terminal Form :

Gull wing

FET Type :

N-Channel

Operating Temperature :

-55°C~175°C TJ

Terminal Position :

Single

Series :

OptiMOS™

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate Charge (Qg) (Max) @ Vgs :

13nC @ 10V

RoHS Status :

ROHS3 Compliant

Reach Compliance Code :

not_compliant

Pin Count :

4

Surface Mount :

yes

Additional Feature :

LOGIC LEVEL COMPATIBLE, AVALANCHE RATED

Power Dissipation-Max :

47W Tc

Terminal Finish :

Tin (Sn)

Published :

2008

Input Capacitance (Ciss) (Max) @ Vds :

470pF @ 30V

Vgs(th) (Max) @ Id :

2V @ 16μA

Operating Mode :

ENHANCEMENT MODE

Pbfree Code :

No

JESD-609 Code :

e3

Current - Continuous Drain (Id) @ 25°C :

18A Tc

Number of Terminations :

2

Rds On (Max) @ Id, Vgs :

64m Ω @ 18A, 10V

Case Connection :

DRAIN

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Configuration :

SINGLE WITH BUILT-IN DIODE

Drain Current-Max (Abs) (ID) :

18A

JESD-30 Code :

R-PSSO-G2

JEDEC-95 Code :

TO-252AA

Drain to Source Voltage (Vdss) :

60V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Vgs (Max) :

±20V

Pulsed Drain Current-Max (IDM) :

72A