IPD60R950C6ATMA1
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- Mfr.Part #
- IPD60R950C6ATMA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 4.4A TO252-3
- Stock
- 32,612
- In Stock ：
- 32,612
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drain-source On Resistance-Max :
- 0.95Ohm
- Number of Channels :
- 1
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Max Dual Supply Voltage :
- 600V
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Weight :
- 3.949996g
- Transistor Application :
- SWITCHING
- Turn-Off Delay Time :
- 60 ns
- Mounting Type :
- Surface Mount
- RoHS Status :
- ROHS3 Compliant
- Reach Compliance Code :
- not_compliant
- Vgs(th) (Max) @ Id :
- 3.5V @ 130μA
- Packaging :
- Tape and Reel (TR)
- Continuous Drain Current (ID) :
- 4.4A
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Gate to Source Voltage (Vgs) :
- 30V
- Series :
- CoolMOS™ C6
- Gate Charge (Qg) (Max) @ Vgs :
- 13nC @ 10V
- Transistor Element Material :
- SILICON
- Operating Temperature :
- -55°C~150°C TJ
- Published :
- 2008
- JESD-30 Code :
- R-PSSO-G2
- Number of Terminations :
- 2
- Element Configuration :
- Single
- Power Dissipation :
- 37W
- FET Type :
- N-Channel
- Factory Lead Time :
- 12 Weeks
- Vgs (Max) :
- ±20V
- Number of Pins :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mount :
- Surface Mount
- Operating Mode :
- ENHANCEMENT MODE
- Current - Continuous Drain (Id) @ 25°C :
- 4.4A Tc
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Terminal Finish :
- Tin (Sn)
- Power Dissipation-Max :
- 37W Tc
- Fall Time (Typ) :
- 13 ns
- Case Connection :
- DRAIN
- Terminal Form :
- Gull wing
- Input Capacitance (Ciss) (Max) @ Vds :
- 280pF @ 100V
- JESD-609 Code :
- e3
- Avalanche Energy Rating (Eas) :
- 46 mJ
- Number of Elements :
- 1
- Rise Time :
- 8ns
- Drain to Source Breakdown Voltage :
- 600V
- Turn On Delay Time :
- 10 ns
- Lead Free :
- Lead Free
- Rds On (Max) @ Id, Vgs :
- 950m Ω @ 1.5A, 10V
- Datasheets
- IPD60R950C6ATMA1
N-Channel Tape & Reel (TR) 950m Ω @ 1.5A, 10V ±20V 280pF @ 100V 13nC @ 10V TO-252-3, DPak (2 Leads + Tab), SC-63
IPD60R950C6ATMA1 Overview
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 46 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 280pF @ 100V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 4.4A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 600V, and this device has a drainage-to-source breakdown voltage of 600VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 60 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 10 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 30V to 1.In addition to 600V, it supports dual voltages up to the maximum.Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
IPD60R950C6ATMA1 Features
the avalanche energy rating (Eas) is 46 mJ
a continuous drain current (ID) of 4.4A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 60 ns
IPD60R950C6ATMA1 Applications
There are a lot of Infineon Technologies
IPD60R950C6ATMA1 applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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