IPD60R950C6

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Mounting Type :

Surface Mount

Vgs (Max) :

±20V

Packaging :

Cut Tape (CT)

Drain Current-Max (Abs) (ID) :

4.4A

Qualification Status :

Not Qualified

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drive Voltage (Max Rds On,Min Rds On) :

10V

DS Breakdown Voltage-Min :

600V

Avalanche Energy Rating (Eas) :

46 mJ

Pulsed Drain Current-Max (IDM) :

12A

Terminal Form :

Gull wing

Power Dissipation-Max :

37W Tc

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Current - Continuous Drain (Id) @ 25°C :

4.4A Tc

Case Connection :

DRAIN

Input Capacitance (Ciss) (Max) @ Vds :

280pF @ 100V

Pin Count :

4

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

2

Vgs(th) (Max) @ Id :

3.5V @ 130μA

Configuration :

SINGLE WITH BUILT-IN DIODE

FET Type :

N-Channel

JESD-609 Code :

e3

Surface Mount :

yes

Published :

2008

Series :

CoolMOS™

Drain to Source Voltage (Vdss) :

600V

Rds On (Max) @ Id, Vgs :

950m Ω @ 1.5A, 10V

Transistor Application :

SWITCHING

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Terminal Finish :

Tin (Sn)

Number of Elements :

1

Transistor Element Material :

SILICON

RoHS Status :

ROHS3 Compliant

Terminal Position :

Single

Gate Charge (Qg) (Max) @ Vgs :

13nC @ 10V

JESD-30 Code :

R-PSSO-G2

Operating Temperature :

-55°C~150°C TJ

Drain-source On Resistance-Max :

0.95Ohm

Pbfree Code :

yes

Operating Mode :

ENHANCEMENT MODE