IPD60R800CEAUMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Pbfree Code :

yes

Drain to Source Voltage (Vdss) :

600V

Packaging :

Tape and Reel (TR)

Lead Free :

Contains Lead

Halogen Free :

Halogen Free

Published :

2008

Avalanche Energy Rating (Eas) :

72 mJ

Number of Elements :

1

Terminal Position :

Single

Case Connection :

DRAIN

Terminal Form :

Gull wing

Terminal Finish :

Tin (Sn)

Min Operating Temperature :

-40°C

JESD-609 Code :

e3

Number of Terminations :

2

Pulsed Drain Current-Max (IDM) :

15.7A

RoHS Status :

ROHS3 Compliant

Configuration :

SINGLE WITH BUILT-IN DIODE

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Reach Compliance Code :

not_compliant

Transistor Application :

SWITCHING

Mount :

Surface Mount

Drain to Source Resistance :

680mOhm

Max Operating Temperature :

150°C

ECCN Code :

EAR99

Operating Mode :

ENHANCEMENT MODE

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

JESD-30 Code :

R-PSSO-G2

JEDEC-95 Code :

TO-252

Polarity/Channel Type :

N-Channel

Max Dual Supply Voltage :

600V

Factory Lead Time :

18 Weeks