IPD60R800CEATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Avalanche Energy Rating (Eas) :

72 mJ

Operating Temperature :

-40°C~150°C TJ

Input Capacitance (Ciss) (Max) @ Vds :

373pF @ 100V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Gate Charge (Qg) (Max) @ Vgs :

17.2nC @ 10V

Published :

2014

Drain to Source Breakdown Voltage :

600V

Turn On Delay Time :

9 ns

Transistor Application :

SWITCHING

RoHS Status :

RoHS Compliant

Series :

CoolMOS™ CE

Fall Time (Typ) :

12 ns

Power Dissipation-Max :

48W Tc

Operating Mode :

ENHANCEMENT MODE

Vgs (Max) :

±20V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Packaging :

Tape and Reel (TR)

Drain-source On Resistance-Max :

0.8Ohm

Continuous Drain Current (ID) :

5.6A

Rds On (Max) @ Id, Vgs :

800m Ω @ 2A, 10V

Gate to Source Voltage (Vgs) :

20V

Current - Continuous Drain (Id) @ 25°C :

5.6A Tc

Terminal Form :

Gull wing

Lead Free :

Lead Free

Number of Channels :

1

Weight :

3.949996g

Rise Time :

7ns

Number of Elements :

1

Number of Terminations :

2

Mounting Type :

Surface Mount

Drive Voltage (Max Rds On,Min Rds On) :

10V

Mount :

Surface Mount

Element Configuration :

Single

Turn-Off Delay Time :

50 ns

FET Type :

N-Channel

Pbfree Code :

yes

Case Connection :

DRAIN

JESD-30 Code :

R-PSSO-G2

Transistor Element Material :

SILICON

ECCN Code :

EAR99

Vgs(th) (Max) @ Id :

3.5V @ 170μA