IPD60R750E6BTMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Elements :

1

Avalanche Energy Rating (Eas) :

72 mJ

Drain-source On Resistance-Max :

0.75Ohm

Vgs (Max) :

±20V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C~150°C TJ

Terminal Finish :

Tin (Sn)

Case Connection :

DRAIN

Pulsed Drain Current-Max (IDM) :

15.7A

Input Capacitance (Ciss) (Max) @ Vds :

373pF @ 100V

Surface Mount :

yes

Gate Charge (Qg) (Max) @ Vgs :

17.2nC @ 10V

Transistor Element Material :

SILICON

ECCN Code :

EAR99

RoHS Status :

ROHS3 Compliant

Current - Continuous Drain (Id) @ 25°C :

5.7A Tc

Vgs(th) (Max) @ Id :

3.5V @ 170μA

Terminal Position :

Single

JESD-609 Code :

e3

Reach Compliance Code :

not_compliant

Configuration :

SINGLE WITH BUILT-IN DIODE

JESD-30 Code :

R-PSSO-G2

Rds On (Max) @ Id, Vgs :

750m Ω @ 2A, 10V

Operating Mode :

ENHANCEMENT MODE

Series :

CoolMOS™

DS Breakdown Voltage-Min :

600V

Drain to Source Voltage (Vdss) :

600V

Published :

2017

Power Dissipation-Max :

48W Tc

Qualification Status :

Not Qualified

Pbfree Code :

No

Packaging :

Tape and Reel (TR)

Terminal Form :

Gull wing

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Pin Count :

4

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Number of Terminations :

2

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

FET Type :

N-Channel

Drive Voltage (Max Rds On,Min Rds On) :

10V