IPD60R650CEAUMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Position :

Single

Case Connection :

DRAIN

Number of Terminations :

2

Drain to Source Resistance :

540mOhm

Polarity/Channel Type :

N-Channel

JESD-609 Code :

e3

JESD-30 Code :

R-PSSO-G2

Transistor Application :

SWITCHING

Terminal Form :

Gull wing

Lead Free :

Contains Lead

Pbfree Code :

yes

JEDEC-95 Code :

TO-252

Avalanche Energy Rating (Eas) :

133 mJ

Mount :

Surface Mount

Max Dual Supply Voltage :

600V

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Operating Mode :

ENHANCEMENT MODE

Factory Lead Time :

18 Weeks

Halogen Free :

Halogen Free

Packaging :

Tape and Reel (TR)

Published :

2008

Reach Compliance Code :

not_compliant

Pulsed Drain Current-Max (IDM) :

19A

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Number of Elements :

1

ECCN Code :

EAR99

Drain to Source Voltage (Vdss) :

600V

Max Operating Temperature :

150°C

Terminal Finish :

Tin (Sn)

Min Operating Temperature :

-40°C

RoHS Status :

ROHS3 Compliant

Configuration :

SINGLE WITH BUILT-IN DIODE