IPD60R650CEATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

ECCN Code :

EAR99

JESD-30 Code :

R-PSSO-G2

Published :

2014

Operating Mode :

ENHANCEMENT MODE

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Turn-Off Delay Time :

58 ns

Rise Time :

8ns

Fall Time (Typ) :

11 ns

DS Breakdown Voltage-Min :

600V

Transistor Application :

SWITCHING

Rds On (Max) @ Id, Vgs :

650m Ω @ 2.4A, 10V

Vgs (Max) :

±20V

Operating Temperature :

-40°C~150°C TJ

Lead Free :

Lead Free

Number of Terminations :

2

Drain to Source Voltage (Vdss) :

600V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drain-source On Resistance-Max :

0.65Ohm

Continuous Drain Current (ID) :

7A

Power Dissipation-Max :

63W Tc

FET Type :

N-Channel

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drive Voltage (Max Rds On,Min Rds On) :

10V

Gate to Source Voltage (Vgs) :

20V

Packaging :

Tape and Reel (TR)

Case Connection :

DRAIN

Gate Charge (Qg) (Max) @ Vgs :

20.5nC @ 10V

Element Configuration :

Single

Current - Continuous Drain (Id) @ 25°C :

7A Tc

Weight :

3.949996g

Mount :

Surface Mount

Turn On Delay Time :

10 ns

Number of Channels :

1

Input Capacitance (Ciss) (Max) @ Vds :

440pF @ 100V

Mounting Type :

Surface Mount

Terminal Form :

Gull wing

Number of Elements :

1

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Series :

CoolMOS™ CE

RoHS Status :

RoHS Compliant

Vgs(th) (Max) @ Id :

3.5V @ 200µA