IPD60R600P7SAUMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Rds On (Max) @ Id, Vgs :

600m Ω @ 1.7A, 10V

FET Type :

N-Channel

Drain-source On Resistance-Max :

0.6Ohm

DS Breakdown Voltage-Min :

600V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Capacitance (Ciss) (Max) @ Vds :

363pF @ 400V

Factory Lead Time :

18 Weeks

Drain to Source Voltage (Vdss) :

600V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Terminal Form :

Gull wing

Operating Temperature :

-40°C~150°C TJ

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Terminal Position :

Single

Transistor Element Material :

SILICON

Avalanche Energy Rating (Eas) :

17 mJ

Surface Mount :

yes

Number of Elements :

1

Mounting Type :

Surface Mount

Transistor Application :

SWITCHING

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Reach Compliance Code :

not_compliant

JESD-30 Code :

R-PSSO-G2

RoHS Status :

ROHS3 Compliant

Number of Terminations :

2

JESD-609 Code :

e3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Gate Charge (Qg) (Max) @ Vgs :

9nC @ 10V

Series :

CoolMOS™ P7

Configuration :

SINGLE WITH BUILT-IN DIODE

Terminal Finish :

Tin (Sn)

Current - Continuous Drain (Id) @ 25°C :

6A Tc

Vgs (Max) :

±20V

Published :

2014

Packaging :

Tape and Reel (TR)

Vgs(th) (Max) @ Id :

4V @ 80μA

Pulsed Drain Current-Max (IDM) :

16A

Operating Mode :

ENHANCEMENT MODE

Power Dissipation-Max :

30W Tc

ECCN Code :

EAR99