IPD60R600P6

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Terminations :

2

Number of Elements :

1

JESD-609 Code :

e3

FET Type :

N-Channel

Current - Continuous Drain (Id) @ 25°C :

7.3A Tc

Series :

CoolMOS™ P6

Terminal Finish :

Tin (Sn)

Terminal Form :

Gull wing

Terminal Position :

Single

Operating Temperature :

-55°C~150°C TJ

RoHS Status :

ROHS3 Compliant

Power Dissipation-Max :

63W Tc

Packaging :

Tape and Reel (TR)

Case Connection :

DRAIN

Avalanche Energy Rating (Eas) :

133 mJ

Operating Mode :

ENHANCEMENT MODE

Rds On (Max) @ Id, Vgs :

600m Ω @ 2.4A, 10V

Drain to Source Voltage (Vdss) :

600V

Gate Charge (Qg) (Max) @ Vgs :

12nC @ 10V

Drain-source On Resistance-Max :

0.6Ohm

Pulsed Drain Current-Max (IDM) :

18A

Transistor Element Material :

SILICON

Published :

2011

Factory Lead Time :

20 Weeks

Transistor Application :

SWITCHING

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Vgs (Max) :

±20V

Mounting Type :

Surface Mount

DS Breakdown Voltage-Min :

600V

Drain Current-Max (Abs) (ID) :

7.3A

Pbfree Code :

No

Drive Voltage (Max Rds On,Min Rds On) :

10V

JESD-30 Code :

R-PSSO-G2

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Surface Mount :

yes

Configuration :

SINGLE WITH BUILT-IN DIODE

Input Capacitance (Ciss) (Max) @ Vds :

557pF @ 100V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)