IPD60R600E6BTMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Pin Count :

3

Vgs(th) (Max) @ Id :

3.5V @ 200µA

Power Dissipation (Max) :

63W (Tc)

Current - Continuous Drain (Id) @ 25°C :

7.3A (Tc)

Package :

Bulk

Gate Charge (Qg) (Max) @ Vgs :

20.5 nC @ 10 V

Rds On (Max) @ Id, Vgs :

600mOhm @ 2.4A, 10V

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Operating Temperature :

-55°C ~ 150°C (TJ)

Height :

2.41mm

Product Status :

Active

Maximum Operating Temperature :

+150 °C

Vgs (Max) :

±20V

Length :

6.73mm

Package Type :

DPAK (TO-252)

Supplier Device Package :

PG-TO252-3-313

Mounting Type :

Surface Mount

Series :

CoolMOS?

FET Type :

N-Channel

Channel Type :

N

Drive Voltage (Max Rds On, Min Rds On) :

10V

Minimum Operating Temperature :

-55 °C

Channel Mode :

Enhancement

Drain to Source Voltage (Vdss) :

600 V

Number of Elements per Chip :

1

FET Feature :

-

Width :

6.22mm

Input Capacitance (Ciss) (Max) @ Vds :

440 pF @ 100 V