IPD60R600E6ATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Drive Voltage (Max Rds On,Min Rds On) :

10V

Drain-source On Resistance-Max :

0.6Ohm

Min Operating Temperature :

-55°C

Max Dual Supply Voltage :

600V

Mounting Type :

Surface Mount

Vgs(th) (Max) @ Id :

3.5V @ 200µA

Terminal Position :

Single

Series :

CoolMOS™ E6

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Current - Continuous Drain (Id) @ 25°C :

7.3A Tc

Number of Elements :

1

Gate Charge (Qg) (Max) @ Vgs :

20.5nC @ 10V

Power Dissipation-Max :

63W Tc

JESD-30 Code :

R-PSSO-G2

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Published :

2008

Number of Terminations :

2

Factory Lead Time :

12 Weeks

Pulsed Drain Current-Max (IDM) :

19A

Operating Mode :

ENHANCEMENT MODE

Input Capacitance (Ciss) (Max) @ Vds :

440pF @ 100V

Vgs (Max) :

±20V

Terminal Form :

Gull wing

Terminal Finish :

Tin (Sn)

Packaging :

Bulk

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Configuration :

SINGLE WITH BUILT-IN DIODE

FET Type :

N-Channel

Avalanche Energy Rating (Eas) :

133 mJ

RoHS Status :

ROHS3 Compliant

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Case Connection :

DRAIN

Transistor Application :

SWITCHING

Rds On (Max) @ Id, Vgs :

600m Ω @ 2.4A, 10V

Mount :

Surface Mount

JESD-609 Code :

e3

Reach Compliance Code :

not_compliant