IPD60R600CP

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Breakdown Voltage :

600 V

Max Operating Temperature :

150 °C

Product Status :

Active

Continuous Drain Current (ID) :

6.1 A

Max Power Dissipation :

150 W

ECCN Code :

EAR99

Operating Temperature :

-55°C ~ 150°C (TJ)

Transistor Application :

SWITCHING

Terminal Position :

Single

Continuous Drain Current Id :

6.1

Manufacturer :

Infineon Technologies AG

Factory Lead Time :

1 Week

Technology :

MOSFET (Metal Oxide)

Number of Pins :

3

Element Configuration :

Single

RoHS :

Compliant

Dual Supply Voltage :

650 V

Drain to Source Voltage (Vdss) :

60 V

Supplier Device Package :

PG-TO252-3-313

FET Feature :

-

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Package :

Bulk

Mounting Type :

Surface Mount

Pulsed Drain Current-Max (IDM) :

15 A

Rds On Max :

3.4 mΩ

Power Dissipation :

60 W

Reach Compliance Code :

Compliant

Package Shape :

RECTANGULAR

FET Technology :

METAL-OXIDE SEMICONDUCTOR

REACH SVHC :

No SVHC

Operating Mode :

ENHANCEMENT MODE

Packaging :

Cut Tape

Channel Type :

N

Nominal Vgs :

3 V

Drain to Source Resistance :

600 mΩ

Terminal Form :

Gull wing

Threshold Voltage :

3 V

Rise Time :

12 ns

Series :

CoolMOS™

Qualification Status :

Not Qualified

JEDEC-95 Code :

TO-252AA

Surface Mount :

yes

Gate to Source Voltage (Vgs) :

20 V

Turn-Off Delay Time :

75 ns

DS Breakdown Voltage-Min :

600 V

Avalanche Energy Rating (Eas) :

144 mJ

Power Dissipation-Max (Abs) :

60 W

Polarity/Channel Type :

N-Channel

Configuration :

SINGLE WITH BUILT-IN DIODE

Vgs (Max) :

±20V

Input Capacitance (Ciss) (Max) @ Vds :

550 pF @ 100 V

Drive Voltage (Max Rds On, Min Rds On) :

10V

JESD-30 Code :

R-PSSO-G2

FET Type :

N-Channel

Min Operating Temperature :

-55 °C

Drain-source On Resistance-Max :

0.6 Ω

Vgs(th) (Max) @ Id :

3.5V @ 220µA

Pin Count :

4

Number of Elements :

1

Transistor Element Material :

SILICON

Subcategory :

FET General Purpose Power

Gate Charge (Qg) (Max) @ Vgs :

27 nC @ 10 V

Number of Terminals :

2

Current - Continuous Drain (Id) @ 25°C :

6.1A (Tc)

Turn-On Delay Time :

17 ns

Termination :

SMD/SMT

Pbfree Code :

yes

Rds On (Max) @ Id, Vgs :

600mOhm @ 3.3A, 10V

Power Dissipation (Max) :

60W (Tc)

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Drain Current-Max (Abs) (ID) :

6.1 A

Input Capacitance :

13 nF