IPD60R600C6BTMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Avalanche Energy Rating (Eas) :

133 mJ

JESD-609 Code :

e3

Operating Mode :

ENHANCEMENT MODE

Rds On (Max) @ Id, Vgs :

600m Ω @ 2.4A, 10V

Transistor Application :

SWITCHING

Reach Compliance Code :

not_compliant

ECCN Code :

EAR99

Drain Current-Max (Abs) (ID) :

7.3A

Input Capacitance (Ciss) (Max) @ Vds :

440pF @ 100V

Number of Terminations :

2

Current - Continuous Drain (Id) @ 25°C :

7.3A Tc

Qualification Status :

Not Qualified

Surface Mount :

yes

DS Breakdown Voltage-Min :

600V

Vgs (Max) :

±20V

Terminal Finish :

Tin (Sn)

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

FET Type :

N-Channel

Terminal Form :

Gull wing

Gate Charge (Qg) (Max) @ Vgs :

20.5nC @ 10V

Mounting Type :

Surface Mount

Packaging :

Cut Tape (CT)

Case Connection :

DRAIN

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation-Max :

63W Tc

JESD-30 Code :

R-PSSO-G2

Pulsed Drain Current-Max (IDM) :

19A

Pin Count :

4

Published :

2008

Pbfree Code :

yes

Drive Voltage (Max Rds On,Min Rds On) :

10V

Drain to Source Voltage (Vdss) :

600V

Terminal Position :

Single

Configuration :

SINGLE WITH BUILT-IN DIODE

Vgs(th) (Max) @ Id :

3.5V @ 200µA

RoHS Status :

ROHS3 Compliant

Transistor Element Material :

SILICON

Drain-source On Resistance-Max :

0.6Ohm

Operating Temperature :

-55°C~150°C TJ

Series :

CoolMOS™