IPD60R600C6ATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Drive Voltage (Max Rds On,Min Rds On) :

10V

Max Dual Supply Voltage :

600V

Operating Temperature :

-55°C~150°C TJ

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Continuous Drain Current (ID) :

7.3A

Operating Mode :

ENHANCEMENT MODE

Packaging :

Tape and Reel (TR)

JESD-609 Code :

e3

Terminal Form :

Gull wing

Input Capacitance (Ciss) (Max) @ Vds :

440pF @ 100V

Turn-Off Delay Time :

80 ns

Mount :

Surface Mount

FET Type :

N-Channel

Transistor Element Material :

SILICON

Drain-source On Resistance-Max :

0.6Ohm

Mounting Type :

Surface Mount

Factory Lead Time :

12 Weeks

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Elements :

1

JESD-30 Code :

R-PSSO-G2

Configuration :

SINGLE WITH BUILT-IN DIODE

Number of Pins :

3

Terminal Finish :

Tin (Sn)

Vgs(th) (Max) @ Id :

3.5V @ 200µA

Turn On Delay Time :

12 ns

Rise Time :

9ns

Number of Terminations :

2

Power Dissipation :

63W

Current - Continuous Drain (Id) @ 25°C :

7.3A Tc

Rds On (Max) @ Id, Vgs :

600m Ω @ 2.4A, 10V

Power Dissipation-Max :

63W Tc

Reach Compliance Code :

not_compliant

Case Connection :

DRAIN

Weight :

3.949996g

Published :

2008

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Series :

CoolMOS™ C6

Transistor Application :

SWITCHING

Terminal Position :

Single

Number of Channels :

1

Lead Free :

Lead Free

Vgs (Max) :

±20V

Gate Charge (Qg) (Max) @ Vgs :

20.5nC @ 10V

Gate to Source Voltage (Vgs) :

20V

Fall Time (Typ) :

13 ns