IPD60R520C6BTMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs (Max) :

±20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Number of Elements :

1

RoHS Status :

ROHS3 Compliant

Avalanche Energy Rating (Eas) :

153 mJ

Terminal Finish :

Tin (Sn)

Configuration :

SINGLE WITH BUILT-IN DIODE

Operating Temperature :

-55°C~150°C TJ

JESD-30 Code :

R-PSSO-G2

Vgs(th) (Max) @ Id :

3.5V @ 230μA

Gate Charge (Qg) (Max) @ Vgs :

23.4nC @ 10V

JESD-609 Code :

e3

ECCN Code :

EAR99

Qualification Status :

Not Qualified

Case Connection :

DRAIN

Drive Voltage (Max Rds On,Min Rds On) :

10V

Terminal Form :

Gull wing

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

DS Breakdown Voltage-Min :

600V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drain-source On Resistance-Max :

0.52Ohm

Power Dissipation-Max :

66W Tc

Drain Current-Max (Abs) (ID) :

8.1A

FET Type :

N-Channel

Operating Mode :

ENHANCEMENT MODE

Pbfree Code :

No

Surface Mount :

yes

Pin Count :

4

Input Capacitance (Ciss) (Max) @ Vds :

512pF @ 100V

Packaging :

Tape and Reel (TR)

Pulsed Drain Current-Max (IDM) :

22A

Number of Terminations :

2

Current - Continuous Drain (Id) @ 25°C :

8.1A Tc

Rds On (Max) @ Id, Vgs :

520m Ω @ 2.8A, 10V

Transistor Element Material :

SILICON

Mounting Type :

Surface Mount

Transistor Application :

SWITCHING

Reach Compliance Code :

not_compliant

Published :

2008

Terminal Position :

Single

Series :

CoolMOS™

Drain to Source Voltage (Vdss) :

600V