IPD60R520C6ATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Pulsed Drain Current-Max (IDM) :

22A

Operating Mode :

ENHANCEMENT MODE

Drive Voltage (Max Rds On,Min Rds On) :

10V

FET Type :

N-Channel

Input Capacitance (Ciss) (Max) @ Vds :

512pF @ 100V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

RoHS Compliant

Published :

2008

Rds On (Max) @ Id, Vgs :

520m Ω @ 2.8A, 10V

Terminal Finish :

Tin (Sn)

Vgs(th) (Max) @ Id :

3.5V @ 230μA

Vgs (Max) :

±20V

Case Connection :

DRAIN

JESD-30 Code :

R-PSSO-G2

Avalanche Energy Rating (Eas) :

153 mJ

Series :

CoolMOS™ C6

Transistor Application :

SWITCHING

DS Breakdown Voltage-Min :

600V

Drain to Source Voltage (Vdss) :

600V

Mounting Type :

Surface Mount

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Drain-source On Resistance-Max :

0.52Ohm

Factory Lead Time :

12 Weeks

Transistor Element Material :

SILICON

Terminal Form :

Gull wing

Number of Elements :

1

Configuration :

SINGLE WITH BUILT-IN DIODE

Gate Charge (Qg) (Max) @ Vgs :

23.4nC @ 10V

Power Dissipation-Max :

66W Tc

Packaging :

Tape and Reel (TR)

Surface Mount :

yes

Operating Temperature :

-55°C~150°C TJ

Drain Current-Max (Abs) (ID) :

8.1A

JESD-609 Code :

e3

Current - Continuous Drain (Id) @ 25°C :

8.1A Tc

Reach Compliance Code :

not_compliant

Terminal Position :

Single

Number of Terminations :

2