IPD60R460CEATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Published :

2014

Transistor Application :

SWITCHING

Drain-source On Resistance-Max :

0.46Ohm

RoHS Status :

RoHS Compliant

Element Configuration :

Single

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Number of Elements :

1

Power Dissipation-Max :

74W Tc

Drive Voltage (Max Rds On,Min Rds On) :

10V

Rds On (Max) @ Id, Vgs :

460m Ω @ 3.4A, 10V

Number of Channels :

1

Gate Charge (Qg) (Max) @ Vgs :

28nC @ 10V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

ECCN Code :

EAR99

JESD-30 Code :

R-PSSO-G2

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Mounting Type :

Surface Mount

Turn-Off Delay Time :

70 ns

Weight :

3.949996g

Continuous Drain Current (ID) :

9.1A

Rise Time :

9ns

Input Capacitance (Ciss) (Max) @ Vds :

620pF @ 100V

Lead Free :

Lead Free

Operating Mode :

ENHANCEMENT MODE

Drain to Source Voltage (Vdss) :

600V

Fall Time (Typ) :

10 ns

FET Type :

N-Channel

Gate to Source Voltage (Vgs) :

20V

Turn On Delay Time :

11 ns

Current - Continuous Drain (Id) @ 25°C :

9.1A Tc

Operating Temperature :

-40°C~150°C TJ

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Transistor Element Material :

SILICON

Series :

CoolMOS™ CE

Terminal Form :

Gull wing

DS Breakdown Voltage-Min :

600V

Number of Terminations :

2

Packaging :

Tape and Reel (TR)

Case Connection :

DRAIN

Vgs(th) (Max) @ Id :

3.5V @ 280μA

Pulsed Drain Current-Max (IDM) :

26A

Pbfree Code :

yes

Vgs (Max) :

±20V

Mount :

Surface Mount