IPD60R450E6BTMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Rds On (Max) @ Id, Vgs :

450m Ω @ 3.4A, 10V

Input Capacitance (Ciss) (Max) @ Vds :

620pF @ 100V

Published :

2008

Transistor Element Material :

SILICON

Series :

CoolMOS™

Case Connection :

DRAIN

Vgs (Max) :

±20V

Pulsed Drain Current-Max (IDM) :

26A

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Pin Count :

4

Drain-source On Resistance-Max :

0.45Ohm

Packaging :

Tape and Reel (TR)

RoHS Status :

ROHS3 Compliant

Terminal Form :

Gull wing

Mounting Type :

Surface Mount

Transistor Application :

SWITCHING

Power Dissipation-Max :

74W Tc

DS Breakdown Voltage-Min :

600V

Qualification Status :

Not Qualified

Operating Mode :

ENHANCEMENT MODE

Vgs(th) (Max) @ Id :

3.5V @ 280μA

ECCN Code :

EAR99

Number of Elements :

1

JESD-30 Code :

R-PSSO-G2

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Continuous Drain (Id) @ 25°C :

9.2A Tc

Number of Terminations :

2

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Pbfree Code :

No

Operating Temperature :

-55°C~150°C TJ

Surface Mount :

yes

Drain to Source Voltage (Vdss) :

600V

Avalanche Energy Rating (Eas) :

185 mJ

Terminal Position :

Single

Gate Charge (Qg) (Max) @ Vgs :

28nC @ 10V

Drive Voltage (Max Rds On,Min Rds On) :

10V

FET Type :

N-Channel

Configuration :

SINGLE WITH BUILT-IN DIODE